Liquid crystalline medium

ABSTRACT

The invention relates to a liquid crystalline medium based on a mixture of polar compounds with positive dielectric anisotropy, characterized in that said medium contains one or more alkenyl compounds of the formula (I) and one or more compounds of the formula (IA) wherein R, R 1 , R 2 , ring A and ring B, L 1 , L 2 ; L 3 ; L 4 ; X, Z 1 , Z 2 , y and z have the meanings cited in claim 1.

[0001] The present invention relates to a liquid-crystalline medium, tothe use thereof for electro-optical purposes, and to displays containingthis medium.

[0002] Liquid crystals are used, in particular, as dielectrics indisplay devices, since the optical properties of such substances can bemodified by an applied voltage. Electro-optical devices based on liquidcrystals are extremely well known to the person skilled in the art andcan be based on various effects. Examples of such devices are cellshaving dynamic scattering, DAP (deformation of aligned phases) cells,guest/host cells, TN cells having a twisted nematic structure, STN(supertwisted nematic) cells, SBE (superbirefringence effect) cells andOMI (optical mode interference) cells. The most common display devicesare based on the Schadt-Helfrich effect and have a twisted nematicstructure.

[0003] The liquid-crystal materials must have good chemical and thermalstability and good stability to electric fields and electromagneticradiation. Furthermore, the liquid-crystal materials should have lowviscosity and give short addressing times, low threshold voltages andhigh contrast in the cells.

[0004] They should furthermore have a suitable mesophase, for example anematic or cholesteric mesophase for the abovementioned cells, atconventional operating temperatures, i.e. in the broadest possible rangeabove and below room temperature. Since liquid crystals are generallyused as mixtures of a plurality of components, it is important that thecomponents are readily miscible with one another. Further properties,such as the electrical conductivity, the dielectric anisotropy and theoptical anisotropy, must satisfy various requirements depending on thecell type and area of application. For example, materials for cellshaving a twisted nematic structure should have positive dielectricanisotropy and low electrical conductivity.

[0005] For example, media having large positive dielectric anisotropy,broad nematic phases, relatively low birefringence, very highresistivity, good UV and temperature stability and low vapor pressureare desired for matrix liquid-crystal displays containing integratednon-linear elements for switching individual pixels (MLC displays).

[0006] Matrix liquid-crystal displays of this type are known. Non-linearelements which can be used for individual switching of the individualpixels are, for example, active elements (i.e. transistors). This isthen referred to as an “active matrix”, and a distinction can be madebetween two types:

[0007] 1. MOS (metal oxide semiconductor) or other diodes on a siliconwafer as substrate.

[0008] 2. Thin-film transistors (TFTs) on a glass plate as substrate.

[0009] The use of single-crystal silicon as substrate material limitsthe display size, since even modular assembly of various part-displaysresults in problems at the joints.

[0010] In the case of more promising type 2, which is preferred, theelectro-optical effect used is usually the TN effect. A distinction ismade between two technologies: TFTs comprising compound semiconductors,for example CdSe, or TFTs based on polycrystalline or amorphous silicon.Intensive work is being carried out worldwide on the latter technology.

[0011] The TFT matrix is applied to the inside of one glass plate of thedisplay, while the other glass plate carries the transparentcounterelectrode on its inside. Compared with the size of the pixelelectrode, the TFT is very small and has virtually no adverse effect onthe image. This technology can also be expanded to fullycolor-compatible displays, in which a mosaic of red, green and bluefilters is arranged in such a way that each filter element is locatedopposite a switchable pixel.

[0012] The TFT displays usually operate as TN cells with crossedpolarizers in transmission and are backlit.

[0013] The term MLC displays here covers any matrix display containingintegrated non-linear elements, i.e., besides the active matrix, alsodisplays containing passive elements, such as varistors or diodes(MIM=metal-insulator-metal).

[0014] MLC displays of this type are particularly suitable for TVapplications (for example pocket TVs) or for high-information displaysfor computer applications (laptops) and in automobile or aircraftconstruction. Besides problems regarding the angle dependence of thecontrast and the response times, difficulties also arise in MLC displaysdue to inadequate resistivity of the liquid-crystal mixtures [TOGASHI,S., SEKOGUCHI, K., TANABE, H., YAMAMOTO, E., SORIMACHI, K., TAJIMA, E.,WATANABE, H., SHIMIZU, H., Proc. Eurodisplay 84, September 1984: A210-288 Matrix LCD Controlled by Double Stage Diode Rings, p. 141 ff,Paris; STROMER, M., Proc. Eurodisplay 84, September 1984: Design of ThinFilm Transistors for Matrix Addressing of Television Liquid CrystalDisplays, p. 145 ff, Paris]. With decreasing resistance, the contrast ofan MLC display drops, and the problem of after-image elimination canoccur. Since the resistivity of the liquid-crystal mixture generallydrops over the life of an MLC display owing to interaction with theinterior surfaces of the display, a high (initial) resistance is veryimportant in order to obtain acceptable service lives. In particular inthe case of low-volt mixtures, it was hitherto impossible to achievevery high resistivity values. It is furthermore important that theresistivity increases as little as possible with increasing temperatureand after heating and/or UV exposure. The low-temperature properties ofthe mixtures of the prior art are also particularly disadvantageous. Itis required that crystallization and/or smectic phases do not occur,even at low temperatures, and that the temperature dependence of theviscosity is as low as possible. The MLC displays of the prior art thusdo not satisfy today's requirements.

[0015] There thus continues to be a great demand for MLC displays whichhave very high resistivity at the same time as a broad operatingtemperature range, short response times, even at low temperatures, and alow threshold voltage, and which do not have these disadvantages, oronly do so to a reduced extent.

[0016] In TN (Schadt-Helfrich) cells, media are desired which facilitatethe following advantages in the cells:

[0017] expanded nematic phase range (in particular down to lowtemperatures)

[0018] storage stability, even at extremely low temperatures

[0019] switchability at extremely low temperatures (outdoor use,automobile, avionics)

[0020] increased resistance to UV radiation (longer life).

[0021] The media available from the prior art do not allow theseadvantages to be achieved while simultaneously retaining the otherparameters.

[0022] In the case of supertwisted (STN) cells, media are desired whichenable greater multiplexability and/or lower threshold voltages and/orbroader nematic phase ranges (in particular at low temperatures). Tothis end, a further extension of the parameter latitude available(clearing point, smectic-nematic transition or melting point, viscosity,dielectric parameters, elastic parameters) is urgently desired.

[0023] It is an object of the invention to provide media in particularfor these MLC, TN or STN displays which do not have the abovementioneddisadvantages or only do so to a reduced extent, and preferably at thesame time have very high resistivity values and low threshold voltages.

[0024] It has now been found that the above objects can be achieved byusing media according to the invention in displays.

[0025] The invention thus relates to a liquid-crystalline medium basedon a mixture of polar compounds having positive dielectric anisotropy,characterized in that it comprises one or more alkenyl compounds of theformula I

[0026] and one or more compounds of the formula IA

[0027] in which the individual radicals have the following meanings:

[0028] R is a halogenated or unsubstituted alkyl or alkoxy radicalhaving 1 to 15 carbon atoms, where one or more CH₂ groups in theseradicals may also, in each case independently of one another, bereplaced by —C═—C—, —CH═CH—, —O—, —CO—O— or —O—CO— in such a way that Oatoms are not linked directly to one another,

[0029] R¹ is an alkenyl radical having 2 to 7 carbon atoms,

[0030] R² is as defined for R or, if y is 1 or 2, is alternatively Q—Y,

[0031] Q is CF₂, OCF₂, CFH, OCFH, OCHFCF₃, OCF₂CHFCF₂ or a single bond,

[0032] Y is F or Cl,

[0033] X is F, Cl, CN, a halogenated alkyl radical, a halogenatedalkenyl radical, a halogenated alkoxy radical or a halogenatedalkenyloxy radical having up to 6 carbon atoms,

[0034] Z¹ and Z² are each, independently of one another, —CF₂O—, —OCF₂—or a single bond, where, if Z=1, Z¹≠Z²,

[0035] are each, independently of one another

[0036] y is 0, 1 or 2, and

[0037] z is 0 or 1, and

[0038] L¹, L², L³ and L⁴ are each, independently of one another, H or F.

[0039] The compounds of the formulae I and Ia have a broad range ofapplications. Depending on the choice of substituents, these compoundscan serve as base materials of which liquid-crystalline media arepredominantly composed; however, it is also possible to add compounds ofthe formulae I and IA to liquid-crystalline base materials from otherclasses of compounds in order, for example, to modify the dielectricand/or optical anisotropy of a dielectric of this type and/or tooptimize its threshold voltage and/or its viscosity.

[0040] In the pure state, the compounds of the formulae I and IA arecolorless and form liquid-crystalline mesophases in a temperature rangewhich is favorable for electro-optical use. They are stable chemically,thermally and to light.

[0041] If R is an alkyl radical and/or an alkoxy radical, it can bestraight-chain or branched. It is preferably straight-chain, has 2, 3,4, 5, 6 or 7 carbon atoms and accordingly is preferably ethyl, propyl,butyl, pentyl, hexyl, heptyl, ethoxy, propoxy, butoxy, pentoxy, hexoxyor heptoxy, furthermore methyl, octyl, nonyl, decyl, undecyl, dodecyl,tridecyl, tetradecyl, pentadecyl, methoxy, octoxy, nonoxy, decoxy,undecoxy, dodecoxy, tridecoxy or tetradecoxy.

[0042] Oxaalkyl is preferably straight-chain 2-oxapropyl(=methoxymethyl), 2-(=ethoxymethyl) or 3-oxabutyl (=2-methoxyethyl), 2-,3- or 4-oxapentyl, 2-, 3-, 4- or 5-oxahexyl, 2-, 3-, 4-, 5- or6-oxaheptyl, 2-, 3-, 4-, 5-, 6- or 7-oxaoctyl, 2-, 3-, 4-, 5-, 6-, 7- or8-oxanonyl, or 2-, 3-, 4-, 5-, 6-, 7-, 8- or 9-oxadecyl.

[0043] If R is an alkyl radical in which one CH₂ group has been replacedby —CH═CH—, it can be straight-chain or branched. It is preferablystraight-chain and has 2 to 10 carbon atoms. Accordingly, it is inparticular vinyl, prop-1- or -2-enyl, but-1-, -2- or -3-enyl, pent-1-,-2-, -3- or -4-enyl, hex-1-, -2-, -3-, -4- or -5-enyl, hept-1-, -2-,-3-, -4-, -5- or -6-enyl, oct-1-, -2-, -3-, -4-, -5-, -6- or -7-enyl,non-1-, -2-, -3-, -4-, -5-, -6-, -7- or -8-enyl, dec-1-, -2-, -3-, -4-,-5-, -6-, -7-, -8- or -9-enyl.

[0044] If R is an alkyl radical in which one CH₂ group has been replacedby —O— and one has been replaced by —CO—, these are preferably adjacent.They thus contain an acyloxy group —CO—O— or an oxycarbonyl group—O—CO—. They are preferably straight-chain and have 2 to 6 carbon atoms.They are accordingly in particular acetyloxy, propionyloxy, butyryloxy,pentanoyloxy, hexanoyloxy, acetyloxymethyl, propionyloxymethyl,butyryloxymethyl, pentanoyloxymethyl, 2-acetyloxyethyl,2-propionyloxyethyl, 2-butyryloxyethyl, 2-acetyloxypropyl,3-propionyloxypropyl, 4-acetyloxybutyl, methoxycarbonyl, ethoxycarbonyl,propoxycarbonyl, butoxycarbonyl, pentoxycarbonyl, methoxycarbonylmethyl,ethoxycarbonylmethyl, propoxycarbonylmethyl, butoxycarbonylmethyl,2-(methoxycarbonyl)ethyl, 2-(ethoxycarbonyl)ethyl,2-(propoxycarbonyl)ethyl, 3-(methoxycarbonyl)propyl,3-(ethoxycarbonyl)propyl or 4-(methoxycarbonyl)butyl.

[0045] If R is an alkyl radical in which one CH₂ group has been replacedby unsubstituted or substituted —CH═CH— and an adjacent CH₂ group hasbeen replaced by CO or CO—O or O—CO, it can be straight-chain orbranched. It is preferably straight-chain and has 4 to 12 carbon atoms.Accordingly, it is in particular acryloyloxymethyl, 2-acryloyloxyethyl,3-acryloyloxypropyl, 4-acryloyloxybutyl, 5-acryloyloxypentyl,6-acryloyloxyhexyl, 7-acryloyloxyheptyl, 8-acryloyloxyoctyl,9-acryloyloxynonyl, 10-acryloyloxydecyl, methacryloyloxymethyl,2-methacryloyloxyethyl, 3-methacryloyloxypropyl, 4-methacryloyloxybutyl,5-methacryloyloxypentyl, 6-methacryloyloxyhexyl,7-methacryloyloxyheptyl, 8-methacryloyloxyoctyl or9-methacryloyloxynonyl.

[0046] If R is an alkyl or alkenyl radical which is mono-substituted byCN or CF₃, this radical is preferably straight-chain. The substitutionby CN or CF₃ is in any position.

[0047] If R is an alkyl or alkenyl radical which is at leastmonosubstituted by halogen, this radical is preferably straight-chainand halogen is preferably F or Cl. In the case of polysubstitution,halogen is preferably F. The resulting radicals also includeperfluorinated radicals. In the case of monosubstitution, the fluoro orchloro substituent can be in any desired position, but is preferably inthe co-position.

[0048] Compounds containing branched pendant groups R may occasionallybe of importance owing to better solubility in the conventionalliquid-crystalline base materials, but in particular as chiral dopantsif they are optically active. Smectic compounds of this type aresuitable as components for ferroelectric materials.

[0049] Branched groups of this type generally contain not more than onechain branch. Preferred branched radicals R are isopropyl, 2-butyl(=1-methylpropyl), isobutyl (=2-methylpropyl), 2-methylbutyl, isopentyl(=3-methylbutyl), 2-methylpentyl, 3-methylpentyl, 2-ethylhexyl,2-propylpentyl, isopropoxy, 2-methylpropoxy, 2-methylbutoxy,3-methylbutoxy, 2-methylpentoxy, 3-methylpentoxy, 2-ethylhexoxy,1-methylhexoxy or 1-methylheptoxy.

[0050] If R is an alkyl radical in which two or more CH₂ groups havebeen replaced by —O— and/or —CO—O—, it can be straight-chain orbranched. It is preferably branched and has 3 to 12 carbon atoms.Accordingly, it is in particular biscarboxymethyl, 2,2-biscarboxyethyl,3,3-biscarboxypropyl, 4,4-biscarboxybutyl, 5,5-biscarboxypentyl,6,6-biscarboxyhexyl, 7,7-biscarboxyheptyl, 8,8-biscarboxyoctyl,9,9-biscarboxynonyl, 10,10-biscarboxydecyl, bis(methoxycarbonyl)methyl,2,2-bis(methoxycarbonyl)ethyl, 3,3-bis(methoxycarbonyl)propyl,4,4-bis(methoxycarbonyl)butyl, 5,5-bis(methoxycarbonyl)pentyl,6,6-bis(methoxycarbonyl)hexyl, 7,7-bis(methoxycarbonyl)heptyl,8,8-bis(methoxycarbonyl)octyl, bis(ethoxycarbonyl)methyl,2,2-bis(ethoxycarbonyl)ethyl, 3,3-bis(ethoxycarbonyl)propyl,4,4-bis(ethoxycarbonyl)butyl or 5,5-bis(ethoxycarbonyl)hexyl.

[0051] The compounds of the formulae I and IA are prepared by methodsknown per se, as described in the literature (for example in thestandard works, such as Houben-Weyl, Methoden der Organischen Chemie,Georg-Thieme-Verlag, Stuttgart), to be precise under reaction conditionswhich are known and suitable for said reactions. Use can also be madehere of variants which are known per se, but are not mentioned here ingreater detail. The compounds of formula IA are known, for example, fromDE-A-40 06 921.

[0052] The invention also relates to electro-optical displays (inparticular STN or MLC displays having two plane-parallel outer plates,which, together with a frame, form a cell, integrated non-linearelements for switching individual pixels on the outer plates, and anematic liquid-crystal mixture of positive dielectric anisotropy andhigh resistivity which is located in the cell) which contain media ofthis type, and to the use of these media for electro-optical purposes.

[0053] The liquid-crystal mixtures according to the invention allow asignificant extension of the parameter latitude which is available. Theachievable combinations of clearing point, viscosity at low temperature,thermal and UV stability and dielectric anisotropy are far superior tocurrent prior art materials.

[0054] The requirement for a high clearing point, nematic phase at lowtemperature and high Δε has hitherto only been achieved inadequately.Although systems such as, for example, ZLI-3119 have a comparableclearing point and comparably favorable viscosities, they have, however,a Δε of only +3.

[0055] Other mixture systems have comparable viscosities and Δε values,but only clearing points in the region of 60° C.

[0056] While retaining the nematic phase down to −20° C., preferablydown to −30° C., particularly preferably down to −40° C., and clearingpoints above 60° C., preferably above 65° C., particularly preferablyabove 70° C., the liquid-crystal mixtures according to the inventionenable dielectric anisotropy values Δε of ≧6, preferably ≧8, and a highspecific resistance value to be achieved simultaneously, allowingexcellent STN and MLC displays to be achieved. In particular, themixtures are characterized by low operating voltages. The TN thresholdsare below 2.0 V, preferably below 1.5 V, particularly preferably <1.3 V.

[0057] It goes without saying that a suitable choice of the componentsof the mixtures according to the invention also allows higher clearingpoints (for example above 110° C.) to be achieved at higher thresholdvoltages, or lower clearing points to be achieved at lower thresholdvoltages, while retaining the other advantageous properties. Likewise,mixtures of higher Δε and thus lower thresholds can be obtained atviscosities which are increased correspondingly little. The MLC displaysaccording to the invention preferably operate at the first Gooch andTarry transmission minimum [C. H. Gooch and H. A. Tarry, Electron. Lett.10, 2-4, 1974; C. H. Gooch and H. A. Tarry, Appl. Phys., Vol. 8,1575-1584, 1975], where, besides particularly favorable electro-opticalproperties, such as, for example, high steepness of the characteristicline and low angle dependence of the contrast (German Patent 30 22 818),a lower dielectric anisotropy is sufficient at the same thresholdvoltage as in an analogous display at the second minimum. Thus,significantly higher resistivities can be achieved using the mixturesaccording to the invention at the first minimum than in the case ofmixtures comprising cyano compounds. A person skilled in the art can usesimple routine methods to produce the birefringence necessary for aspecified layer thickness of the MLC display by suitable choice of theindividual components and their proportions by weight.

[0058] The flow viscosity ν₂₀ at 20° C. is preferably <60 mm².s⁻¹,particularly preferably <50 mm².s⁻¹. The rotational viscosity γ₁ of themixtures according to the invention at 20° C. is preferably <160 mPa·s,particularly preferably <150 mPa·s. The nematic phase range ispreferably at least 90°, in particular at least 100°. This rangepreferably extends at least from −20° to +80°.

[0059] A short response time is desired for liquid-crystal displays.This applies in particular to displays having video reproductioncapability. Such displays require response times (sum t_(on)+t_(off)) ofnot more than 25 ms. The upper response time limit is determined by therefresh rate. The response time is not only influenced by the rotationalviscosity γ₁, but also by the tilt angle. In particular, mixturescomprising ≧20% of the compounds of formula IA exhibit a tilt angleof >2.5, preferably >3.0, compared to the commercial product ZLI-4792from Merck KGaA.

[0060] Measurements of the voltage holding ratio (HR) [S. Matsumoto etal., Liquid Crystals 5, 1320 (1989); K. Niwa et al., Proc. SIDConference, San Francisco, June 1984, p. 304 (1984); G. Weber et al.,Liquid Crystals 5, 1381 (1989)] have shown that mixtures according tothe invention and comprising compounds of the formula IA exhibit aconsiderably smaller drop in the HR with increasing temperature than doanalogous mixtures in which the compounds of the formula IA are replacedby cyanophenylcyclohexanes of the formula

[0061] esters of the formula

[0062] The UV stability of the mixtures according to the invention isalso considerably better, i.e. they exhibit a significantly smaller dropin HR on UV exposure.

[0063] The formula I preferably covers the following compounds:

[0064] in which R¹, L¹, L², Q and Y are as defined in claim 1, and R² isas defined for R.

[0065] Particular preference is given to media according to theinvention which comprise at least one compound of the formula I-1 and/orI-3, particularly preferably in each case at least one compound of theformula I-1.

[0066] In the formulae I-1, I-2 and I-3, R¹ is particularly preferably1E-alkenyl or 3E-alkenyl having 2 to 7 carbon atoms.

[0067] Particularly preferred compounds of the formula I-1 are those inwhich R² is alkenyl having 2 to 7 carbon atoms, in particular those ofthe following formulae:

[0068] in which R^(1a) and R^(2a) are each, independently of oneanother, H, CH₃, C₂H₅ or n-C₃H₇, and alkyl is a straight-chain alkylgroup having 1 to 7 carbon atoms.

[0069] Particular preference is given to media according to theinvention which comprise at least one compound of the formulae I-1aand/or I-1c in which R^(1a) and R^(2a) each have the same meaning, andmedia which comprise at least one compound of the formula I-1e.

[0070] In a further preferred embodiment, the media according to theinvention comprise one or more compounds of the formula I-2.Particularly preferred compounds of the formula I-2 are those in whichL¹ and L² are H, and those in which R² is alkyl having 1 to 8 carbonatoms, in particular 1, 2 or 3 carbon atoms, and R¹ is 1E-alkenyl or3E-alkenyl having 2 to 7 carbon atoms, in particular 2, 3 or 4 carbonatoms.

[0071] Particularly preferred compounds of the formula I-3 are those inwhich L¹ and/or L² are F and Q—Y is F or OCF₃. Further preferredcompounds of the formula I-3 are those in which R¹ is 1E-alkenyl or3E-alkenyl having 2 to 7 carbon atoms, in particular 2, 3 or 4 carbonatoms.

[0072] Particularly preferred compounds of the formula IA are compoundsof the formulae IA-1 to IA-15:

[0073] in which R is as defined in the formula IA.

[0074] Of these preferred compounds, particular preference is given tothose of the formulae IA-1, IA-2, IA-3 and IA-4, in particular of theformulae IA-1 and IA-2.

[0075] The compounds of the formula IA are known, for example, fromDE-A-40 06 921.

[0076] Preferred embodiments are indicated below:

[0077] The medium contains one, two or more compounds of the formulaeIA-1 to IA-12.

[0078] The medium additionally comprises one or more compounds selectedfrom the group consisting of the general formulae II to VI:

[0079]  in which the individual radicals have the following meanings:

[0080] R⁰ is n-alkyl, oxaalkyl, fluoroalkyl or alkenyl, in each casehaving up to 9 carbon atoms,

[0081] X⁰ is F, Cl, halogenated alkyl, alkenyl, alkenyloxy or alkoxyhaving up to 6 carbon atoms,

[0082] Z⁰ is —C₂F₄—, —C₂H₄—, —(CH₂)₄—, —OCH₂— or —CH₂O—,

[0083] Y¹ and Y² are each, independently of one another, H or F,

[0084] r is 0 or 1.

[0085] The compound of the formula IV is preferably

[0086] The medium additionally comprises one or more compounds selectedfrom the group consisting of the general formulae VII to XIII:

[0087]  in which R⁰, X , Y¹ and Y² are each, independently of oneanother, as defined in claim 4. Y³ is H or F. X⁰ is preferably F, Cl,CF₃, OCF₃, or OCHF₂. R⁰ is preferably alkyl, oxaalkyl, fluoroalkyl oralkenyl, in each case having up to 6 carbon atoms.

[0088] The medium additionally comprises one or more ester compounds ofthe formulae Ea to Ed

[0089]  in which R⁰ is as defined in claim 4;

[0090] The proportion of the compound of the formulae Ea to Ed ispreferably from 10 to 30% by weight, in particular from 15 to 25% byweight;

[0091] The proportion of compounds of the formulae IA and I to VItogether in the total mixture is at least 50% by weight;

[0092] The proportion of compounds of the formula I in the total mixtureis from 0,05 to 40% by weight, particularly preferably from 1 to 30% byweight;

[0093] The proportion of compounds of the formula IA in the totalmixture is from 1 to 50% by weight, particularly preferably from 15 to40% by weight;

[0094] The proportion of compounds of the formulae II to VI in the totalmixture is from 30 to 80% by weight;

[0095] The medium comprises compounds of the formulae II, III, IV, V orVI;

[0096] R⁰ is straight-chain alkyl or alkenyl having 2 to 7 carbon atoms;

[0097] The medium essentially consists of compounds of the formulae IA,I to VI and XIII;

[0098] The medium comprises further compounds, preferably selected fromthe following group consisting of the general formulae XIV to XVII:

[0099]  in which R⁰ and X⁰ are as defined above and the 1,4-phenylenerings can be substituted by CN, chlorine or fluorine. The 1,4-phenylenerings are preferably monosubstituted or polysubstituted by fluorineatoms.

[0100] The medium additionally comprises one or more compounds of theformula XVIII

[0101]  in which R⁰, X⁰, Y¹ and Y² are as defined above.

[0102] The medium additionally comprises one, two, three or more,preferably two or three, compounds of the formula

[0103]  in which “alkyl” and “alkyl*” are as defined below.

[0104]  The proportion of compounds of the formulae O1 and/or O2 in themixtures according to the invention is preferably from 5 to 10% byweight.

[0105] The medium preferably comprises from 5 to 35% by weight ofcompound IVa.

[0106] The medium preferably comprises one, two or three compounds ofthe formula IVa, in which X⁰ is F or OCF₃.

[0107] The medium preferably comprises one or more compounds of theformulae IIa to IIg

[0108]  in which R⁰ is as defined above. In the compounds of theformulae IIa-IIe, R⁰ is preferably ethyl, n-propyl, n-butyl andn-pentyl.

[0109] The weight ratio (I+IA):(II+III +IV+V+VI) is preferably from 1:10to 10:1.

[0110] The medium essentially consists of compounds selected from thegroup consisting of the general formulae IA and I to XIII.

[0111] The proportion of the compounds of the formula IVb and/or IVc, inwhich X⁰ is fluorine and R⁰ is C₂H₅, n-C₃H₇, n-C₄H₉ or n-C₅H₁₁, in thetotal mixture is from 2 to 20% by weight, in particular from 2 to 15% byweight;

[0112] The medium additionally comprises one, two or more compoundshaving fused rings of the formulae AN1 to AN7:

[0113]  in which R⁰ is as defined above.

[0114] It has been found that even a relatively small proportion ofcompounds of the formulae I and IA mixed with conventionalliquid-crystal materials, but in particular with one or more compoundsof the formulae II, III, IV, V and/or VI, leads to a considerabledecrease in the threshold voltage and to low birefringence values, wherebroad nematic phases with low smectic-nematic transition temperaturesare simultaneously observed, which improves the storage stability.Particularly preferred are mixtures which, in addition to one or morecompounds of the formulae I and IA, comprise one or more compounds ofthe formula IV, in particular compounds of the formula IVa, in which X⁰is F or OCF₃. The compounds of the formulae I to VI are colorless,stable and readily miscible with one another and with otherliquid-crystalline materials.

[0115] The term “alkyl” or “alkyl*” encompasses straight-chain andbranched alkyl groups having 1-7 carbon atoms, particularly thestraight-chain groups methyl, ethyl, propyl, butyl, pentyl, hexyl andheptyl. Groups having 2-5 carbon atoms are generally preferred.

[0116] The term “alkenyl” encompasses straight-chain and branchedalkenyl groups having 2-7 carbon atoms, in particular the straight-chaingroups. Preferred alkenyl groups are C₂-C₇-1E-alkenyl, C₄-C₇-3E-alkenyl,C₅-C₇-4-alkenyl, C₆-C₇-5-alkenyl and C₇-6-alkenyl, in particularC₂-C₇-1E-alkenyl, C₄-C₇-3E-alkenyl and C₅-C₇-4-alkenyl. Examples ofparticularly preferred alkenyl groups are vinyl, 1E-propenyl,1E-butenyl, 1E-pentenyl, 1E-hexenyl, 1E-heptenyl, 3-butenyl,3E-pentenyl, 3E-hexenyl, 3E-heptenyl, 4-pentenyl, 4Z-hexenyl,4E-hexenyl, 4Z-heptenyl, 5-hexenyl, 6-heptenyl and the like. Groupshaving up to 5 carbon atoms are generally preferred.

[0117] The term “fluoroalkyl” preferably encompasses straight-chaingroups with terminal fluorine, i.e. fluoromethyl, 2-fluoroethyl,3-fluoropropyl, 4-fluorobutyl, 5-fluoropentyl, 6-fluorohexyl and7-fluoroheptyl. Other positions of fluorine are not precluded, however.

[0118] The term “oxaalkyl” preferably encompasses straight-chainradicals of the formula C_(n)H_(2n+1)—O—(CH₂)_(m), where n and m areeach, independently of one another, from 1 to 6. Preferably, n=1 and mis 1 to 6.

[0119] A suitable choice of the meanings of R⁰ and X⁰ allows theresponse times, the threshold voltage, the steepness of the transmissioncharacteristic lines etc. to be modified as desired. For example,1E-alkenyl radicals, 3E-alkenyl radicals, 2E-alkenyloxy radicals and thelike generally result in shorter response times, improved nematictendencies and a higher ratio of the elastic constants k₃₃ (bend) andk₁₁ (splay) compared with alkyl or alkoxy radicals. 4-Alkenyl radicals,3-alkenyl radicals and the like generally result in lower thresholdvoltages and smaller values of k₃₃/k₁₁ compared with alkyl and alkoxyradicals.

[0120] A —CH₂CH₂— group generally results in higher k₃₃/k₁₁ valuescompared with a single covalent bond. Higher k₃₃/k₁₁ values facilitate,for example, flatter transmission characteristic lines in TN cells witha 90° twist (in order to achieve grey shades) and steeper transmissioncharacteristic lines in STN, SBE and OMI cells (highermultiplexability), and vice versa.

[0121] The optimum weight ratio of compounds of the formulae I, IA andII+III+IV+V+VI largely depends on the desired properties, on the choiceof the components of the formulae I, IA, II, III, IV, V and/or VI, andon the choice of any other components which may be present.

[0122] Suitable weight ratios within the range given above can easily bedetermined from case to case.

[0123] The total amount of compounds of the formulae IA and I to XIII inthe mixtures according to the invention is not critical. The mixturescan therefore comprise one or more further components in order tooptimize various properties. However, the observed effect on theresponse times and the threshold voltage is usually greater the higherthe total concentration of compounds of the formulae IA and I to XIII.

[0124] In a particularly preferred embodiment, the media according tothe invention comprise compounds of the formulae II to VI (preferablyII, III and/or IV, especially IVa) in which X⁰ is F, OCF₃, OCHF₂, F,OCH═CF₂, OCF═CF₂ or OCF₂—CF₂H. A favorable synergistic effect with thecompounds of the formulae I and IA results in particularly advantageousproperties. Mixtures comprising compounds of the formula IA and of theformula IVa are particularly notable for their low threshold voltages.

[0125] The individual compounds of the formulae IA and I to XVII, andtheir sub-formulae, which can be used in the media according to theinvention are either known or can be prepared analogously to knowncompounds.

[0126] The construction of the MLC display according to the inventionfrom polarizers, electrode base plates and surface-treated electrodescorresponds to the conventional construction for displays of this type.The term conventional construction is broadly drawn here and also coversall variations and modifications of the MLC display, in particularincluding matrix display elements based on poly-Si TFT or MIM.

[0127] A significant difference between the displays according to theinvention and the conventional displays based on the twisted nematiccell consists, however, in the choice of the liquid-crystal parametersof the liquid-crystal layer.

[0128] The liquid-crystal mixtures which can be used in accordance withthe invention are prepared in a manner conventional per se. In general,the desired amount of the components used in a lesser amount isdissolved in the components making up the principal constituent,expediently at elevated temperature. It is also possible to mixsolutions of the components in an organic solvent, for example inacetone, chloroform or methanol, and to remove the solvent again afterthorough mixing, for example by distillation.

[0129] The dielectrics may also comprise further additives known to theperson skilled in the art and described in the literature. For example,0-15% of pleochroic dyes or chiral dopants can be added.

[0130] C denotes a crystalline phase, S a smectic phase, S_(C) a smecticC phase, N a nematic phase and I the isotropic phase.

[0131] V₁₀ denotes the voltage for 10% transmission (viewing directionperpendicular to the plate surface). t_(on) denotes the on time andt_(off) the off time at an operating voltage corresponding to 2.0 timesthe value of V₁₀. Δn denotes the optical anisotropy and n₀ therefractive index. As denotes the dielectric anisotropy (Δε=ε_(∥)−ε₁₉₅ ,where ε_(∥) refers to the dielectric constant parallel to thelongitudinal axes of the molecule and ε_(⊥) is the dielectric constantperpendicular thereto). The electro-optical data were measured in a TNcell in the 1st minimum (i.e. at a d·Δn value of 0.5) at 20° C., unlessexpressly stated otherwise. The optical data were measured at 20° C.,unless expressly stated otherwise.

[0132] In the present application and in the following examples, thestructures of the liquid-crystal compounds are specified by acronyms,which can be transformed into chemical formulae according to thefollowing Tables A and B. All radicals C_(n)H_(2n+1) and C_(m)H_(2m+1)are straight-chain alkyl radicals having n or m carbon atoms; n and mare integers and are preferably 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 or12. The coding according to Table B is self-evident. Table A specifiesthe acronym for the parent body only. In individual cases, the acronymfor the parent body is followed, separated therefrom by a hyphen, by acode for the substituents R^(1*), R^(2*), L^(1*), L^(2*) and L^(3*):Code for R¹*, R²*, L¹*, L²*, L³* R¹* R²* L¹* L²* L³* nm C_(n)H_(2n+1)C_(m)H_(2m+1) H H H nOm OC_(n)H_(2n+1) C_(m)H_(2m+1) H H H nO.mC_(n)H_(2n+1) OC_(m)H_(2m+1) H H H n C_(n)H_(2n+1) CN H H H nN.FC_(n)H_(2n+1) CN H H F nN.F.F C_(n)H_(2n+1) CN H F F nF C_(n)H_(2n+1) FH H H nOF OC_(n)H_(2n+1) F H H H nF.F C_(n)H_(2n+1) F H H F nmFC_(n)H_(2n+1) C_(m)H_(2m+1) F H H nOCF₃ C_(n)H_(2n+1) OCF₃ H H H nOCF₃.FC_(n)H_(2n+1) OCF₃ F H H n-Vm C_(n)H_(2n+1) —CH═CH—C_(m)H_(2m+1) H H HnV-VM C_(n)H_(2n+1)—CH═CH— —CH═CH—C_(m)H_(2m+1) H H H

[0133] Preferred mixture components are shown in Tables A and B. TABLE A

PYP PYRP

BCH CBC

CCH CCP

CPTP

CEPTP

ECCP CECP

EPCH PCH

PTP BECH

EBCH CPC

B FET-nF

CGG CGU

CFU

[0134] TABLE B

BCH-n.Fm CFU-n-F

CBC-nmF

ECCP-nm

CCZU-n-F

T-nFm CGU-n-F

CDU-n-F CGG-n-F

CPZG-n-OT CC-nV-Vm

CCP-Vn-m CCG-V-F

CCP-nV-m CC-n-V

CCQU-n-F CC-n-V1

CCQG-n-F

CQCU-n-F Dec-U-n-F

CWCU-n-F

CWCG-n-F

CCOC-n-m

CPTU-n-F GPTU-n-F

PQU-n-F PUQU-n-F

PGU-n-F CGZP-n-OT

CCGU-n-F

CCQG-n-F CUQU-n-F

[0135] Particular preference is given to liquid-crystalline mixtureswhich comprise, in addition to the compounds of the formulae I and IA,at least one, two, three or four compounds from Table B. TABLE C Table Clists possible dopants which are usually added to the mixtures accordingto the invention.

C 15 CB 15

CM 21 R/S-811

CM 45 CM 47

R/S-1011

R/S-3011

CN R/S-2011

[0136] The following examples are intended to illustrate the inventionwithout limiting it. Hereinbefore and hereinafter, percentages are givenin percent by weight. All temperatures are specified in degrees Celsius.m.p. denotes melting point, cl.p. denotes clearing point. Furthermore,C=crystalline state, N=nematic phase, S=smectic phase and I=isotropicphase. The data between these symbols represent the transitiontemperatures. Δn denotes the optical anisotropy (589 nm, 20° C.). Theflow viscosity v₂₀ (mm²/s) and the rotational viscosity γ₁ (mPa·s) wereeach determined at 200C. Example 1 CC-5-V 14.0% S → N [° C.]: <−40  CC-3-V1 8.0% Clearing point [° C.]: +72.5 CCQU-3-F 22.0% Δn [589 nm; 20°C.]: +0.0838 BCH-3F.F.F 8.0% Δε [1 kHz; 20° C.]: 9.8 CGU-2-F 10.0% γ₁[mPa · s; 20° C.]: 103 CGU-3-F 11.0% d · Δn [μm; 20° C.]: 0.50 CCZU-2-F4.0% Twist: 90° CCZU-3-F 15.0% V_(10, 0, 20): 1.23 V CCZU-5-F 1.0%CCG-V-F 7.0% Example 2 PCH-7F 4.0% Clearing point [° C.]: 95.9 CC-5-V12.0% Δn [589 nm; 20° C.]: 0.085 CCQU-3-F 18.0% Δε [1 kHz; 20° C.]: 6.9CCP-3F.F.F 5.0% γ₁ [mPa · s; 20° C.]: 135 CCP-5F.F.F 7.0% d · Δn [μm;20° C.]: 0.50 CWCG-3-F 8.0% Twist: 90° CCP-2OCF₃ 8.0% CCP-3OCF₃ 8.0%CCP-4OCF₃ 6.0% CCP-5OCF₃ 8.0% BCH-2F.F 8.0% BCH-3F.F 8.0% Example 3CQGU-3-F 18.0% Clearing point [° C.]: 73.8 CCP-5F.F.F 5.0% Δn [589 nm;20° C.]: 0.087 CWCU-3-F 4.0% Δε [1 kHz; 20° C.]: 11.2 CCG-V-F 1.0% γ₁[mPa · s; 20° C.]: 155 CCP-3OCF₃ 6.0% d · Δn [μm; 20° C.]: 0.50CCP-5OCH₃ 2.0% Twist: 90° CGU-2-F 11.0% CGU-3-F 11.0% CGU-5-F 10.0%BCH-3F.F.F 4.0% CCZU-2-F 7.0% CCZU-3-F 14.0% CCZU-5-F 7.0% Example 4CC-3-V1 3.00% Clearing point [° C.]: 79.0 CCP-2OCF₃ 8.00% Δn [589 nm;20° C.]: 0.0849 CCP-3OCF₃ 8.00% Δε [1 kHz; 20° C.]: 9.8 CCP-4OCF₃ 8.00%γ₁ [mPa · s; 20° C.]: 129 CCQU-2-F 15.00% CCQU-3-F 13.00% CCQU-5-F 8.00%CCP-2F.F.F 10.00% BCH-3F.F.F 9.00% CGU-2-F 10.00% CGU-3-F 6.00% CBC-332.00% Example 5 CC-5-V 12.00% Clearing point [° C.]: 66.7 CC-3-V1 10.00%Δn [589 nm; 20° C.]: 0.080 CCQU-2-F 15.00% Δε [1 kHz; 20° C.]: 8.5CCQU-3-F 12.00% γ₁ [mPa · s; 20° C.]: 103 BCH-3F.F.F 8.00% BCH-2F.F.F2.00% CGU-2-F 11.00% CGU-3-F 10.00% CCZU-2-F 4.00% CCZU-3-F 12.00%BCH-32 4.00% Example 6 CCP-20CF₃ 2.00% S → N [° C.]: <−40.0 CCP-30CF₃9.00% Clearing point [° C.]: +78.5 CCP-2F.F.F 9.00% Δn [589 nm, 20° C.]:+0.1048 CCP-3F.F.F 3.00% d · Δn [20° C.]: 0.50 CGZP-2-OT 14.00% Twist[°]: 90 CGZP-3-OT 10.00% V₁₀ [V]: 0.93 CCZU-2-F 4.00% CCZU-3-F 15.00%CCZU-5-F 2.00% CGU-2-F 3.00% PGU-2-F 9.00% PGU-3-F 2.00% CUQU-2-F 6.00%CUQU-3-F 6.00% CUQU-5-F 2.00% CCP-V-1 4.00% Example 7 CCP-20CF₃ 8.00% S→ N [° C.]: <−40.0 CCP-30CF₃ 8.00% Clearing point [° C.]: +71.5CGZP-2-OT 12.00% Δn [589 nm, 20° C.]: +0.1047 CGZP-3-OT 8.00% γ₁ [20°C., mPa · s]: 141 CCZU-2-F 5.00% d · Δn [20° C.]: 0.50 CCZU-3-F 14.00%Twist [°]: 90 CUQU-2-F 6.00% V₁₀ [V]: 0.97 CUQU-3-F 6.00% CUQU-5-F 2.00%CGU-2-F 6.00% CGU-3-F 4.00% PGU-2-F 8.00% PGU-3-F 5.00% CC-3-V1 3.00%CCH-35 5.00% Example 8 CC-3-V1 3.00% S→ N [° C.]: <−30.0 CCH-35 5.00%Clearing point [° C.]: +74.0 CC-5-V 18.00% Δn [589 nm, 20° C.]: +0.0796CUQU-2-F 7.00% γ₁ [20° C., mPa · s]: 94 CUQU-3-F 4.00% d · Δn [20° C.]:0.50 CCP-30CF₃ 8.00% Twist [°]: 90 CCP-40CF₃ 7.00% V₁₀ [V]: 1.25CCP-2F.F.F 6.00% CGU-2-F 9.00% CCZU-2-F 4.00% CCZU-3-F 15.00% CGZP-2-OT11.00% CGZP-3-OT 3.00% Example 9 CCP-2F.F.F 10.00% S → N [° C.]: <−40.0CCP-3F.F.F 10.00% Clearing point [° C.]: +80.5 CCP-20CF₃ 8.00% Δn [589nm, 20° C.]: +0.0775 CCP-30CF₃ 8.00% γ₁ [20° C., mPa · s]: 105 CCP-40CF₃4.00% d · Δn [20° C.]: 0.50 CCZU-2-F 5.00% Twist [°]: 90 CCZU-3-F 14.00%V₁₀ [V]: 1.30 CUQU-2-F 6.00% CUQU-3-F 6.00% CC-3-VI 9.00% CUZP-2-OT10.00% CC-5-V 10.00% Example 10 CCH-35 5.00% S → N [° C.]: <−40.0CC-3-V1 3.00% Clearing point [° C.]: +71.0 CC-5-V 18.00% Δn [589 nm, 20°C.]: +0.0778 CUQU-2-F 6.00% γ₁ [20° C., mPa · s]: 95 CUQU-3-F 5.00% d ·Δn [20° C.]: 0.50 CUQU-5-F 2.00% Twist [°]: 90 CCP-30CF₃ 8.00% V₁₀ [V]:1.21 CCP-2F.F.F 9.00% CCP-3F.F.F 6.00% BCH-3F.F.F 3.00% CGU-2-F 3.50%CCZU-2-F 4.00% CCZU-3-F 14.50% CGZP-2-OT 10.00% CGZP-3-OT 3.00% Example11 CC-3-V 18.00% Clearing point [° C.]: +79.5 CC-3-V1 9.00% Δn [589 nm,20° C.]: +0.1014 CCH-35 3.00% d · Δn [20° C.]: 0.50 CC-5-V 2.00% Twist[°]: 90 CCP-30CF₃ 7.00% V₁₀ [V]: 1.58 CCP-20CF₃ 6.00% PGU-2-F 7.00%PUQU-2-F 7.00% PUQU-3-F 11.00% CGZP-3-OT 6.00% CCG-V-F 5.00% CCP-V-116.00% BCH-32 3.00% Example 12 CC-3-V 18.00% S → N [° C.]: <−40.0CC-3-V1 9.00% Clearing point [° C.]: +80.0 CCH-35 3.00% Δn [589 nm, 20°C.]: +0.1020 CC-5-V 2.00% γ₁ [20° C., mPa · s]: 72 PCH-53 2.00% d · Δn[20° C.]: 0.50 CCP-20CF₃ 2.00% Twist [°]: 90 CCP-30CF₃ 6.00% V₁₀ [V]1.57 PGU-2-F 7.00% PUQU-2-F 6.00% PUQU-3-F 11.00% CCZU-3-F 4.00%CGZP-3-OT 8.00% CCG-V-F 5.00% CCP-V-1 13.00% CBC-33 2.00% BCH-32 2.00%Example 13 CC-3-V1 10.00% Clearing point [° C.]: +79.5 CC-5-V 8.00% Δn[589 nm, 20° C.]: +0.1040 PCH-301 4.00% d · Δn [20° C.]: 0.50 CCH-354.00% Twist [°]: 90 CCZU-2-F 4.00% V₁₀ [V]: 1.28 CCZU-3-F 11.00%PUQU-2-F 7.00% PUQU-3-F 10.00% PGU-2-F 7.00% CGZP-2-OT 11.00% CGZP-3-OT7.00% CCP-20CF₃ 8.00% CCP-30CF₃ 7.00% CBC-33 2.00% Example 14 CC-3-V110.00% S → N [° C.]: <−40.0 PCH-53 3.00% Clearing point [° C.]: +80.0CC-5-V 8.50% Δn [589 nm, 20° C.]: +0.0846 CCH-35 4.00% γ₁ [20° C., mPa ·s]: 85 CCP-2F.F.F 9.00% d · Δn [20° C.]: 0.50 CCP-3F.F.F 9.00% Twist[°]: 90 CCP-20CF₃ 8.00% V₁₀ [V]: 1. 62 CCP-30CF₃ 8.00% CCP-50CF₃ 5.00%PUQU-2-F 5.50% PUQU-3-F 9.00% CCP-V-1 6.00% CCG-V-F 15.00% Example 15CC-3-V1 10.00% S → N [° C.]: <−40.0 PCH-53 1.00% Clearing point [° C.]:+80.5 CC-5-V 11.00% Δn [589 nm, 20° C.]: +0.0808 CCP-20CF₃ 8.00% γ₁ [20°C., mPa · s]: 81 CCP-30CF₃ 8.00% d · Δn [20° C.]: 0.50 CCG-V-F 17.00%Twist [°]: 90 BCH-2F.F 8.00% V₁₀ [V]: 1.82 BCH-3F.F 8.00% BCH-3F.F.F5.00% PUQU-2-F 6.00% PUQU-3-F 9.00% BCH-32 5.00% CCP-V-1 4.00% Example16 CCH-35 4.00% S → N [° C.]: <−40.0 CC-5-V 12.00% Clearing point [°C.]: +80.5 PCH-53 4.00% Δn [589 nm, 20° C.]: +0.0808 CC-3-V1 10.00% γ₁[20° C., mPa · s]: 81 CCG-V-F 20.00% d · Δn [20° C.]: 0.50 CCP-2F.F.F10.00% Twist [°]: 90 CCP-3F.F.F 10.00% V₁₀ [V]: 1. 82 PUQU-3-F 9.00%CCP-20CF₃ 8.00% CCP-30CF₃ 5.00% CCP-V-1 8.00% Example 17 PCH-53 4.50% S→ N [° C.]: <−40.0 CC-3-V1 10.00% Clearing point [° C.]: +80.0 CC-5-V12.00% Δn [589 nm, 20° C.]: +0.1040 CCG-V-F 20.00% γ₁ [20° C., mPa · s]:83 BCH-3F.F.F 11.00% d · Δn [20° C.]: 0.50 BCH-2F.F 8.00% Twist [°]: 90BCH-3F.F 8.00% V₁₀ [V]: 1.79 PUQU-3-F 9.50% BCH-32 4.00% COP-V-1 13.00%Example 18 CC-3-V1 11.00% S → N [° C.]: <−40.0 PCH-53 1.00% Clearingpoint [° C.]: +80.0 CC-5-V 10.00% Δn [589 nm, 20° C.]: +0.1038 CCP-20CF₃8.00% γ₁ [20° C., mPas · s]: 85 CCP-30CF₃ 8.00% d · Δn [20° C.]: 0.50CCG-V-F 17.00% Twist [°]: 90 BCH-2F.F 8.00% V₁₀ [V]: 1.60 BCH-3F.F 8.00%BCH-3F.F.F 5.00% PUQU-2-F 6.00% PUQU-3-F 9.00% BCH-32 5.00% CCP-V-14.00% Example 19 CC-5-V 8.00% S → N [° C.]: <−40.0 CC-3-V1 11.00%Clearing point [° C.]: +79.0 CCH-35 4.00% Δn [589 nm, 20° C.]: +0.1046PUQU-2-F 6.00% γ₁ [20° C., mPa · s]: 99 PUQU-3-F 10.00% d · Δn [20° C.]:0.50 CGU-2-F 10.00% Twist [°]: 90 CGU-3-F 10.00% V₁₀ [V]: 1.26 CGZP-2-OT11.00% CGZP-3-OT 7.00% CCP-30CF₃ 8.00% CCP-40CF₃ 8.00% CCP-V-1 4.00%CBC-33 3.00% Example 20 CC-3-V1 11.00% S → N [° C.]: <+79.5 PCH-53 2.00%Clearing point [° C.]: −40.0 CC-5-V 8.00% Δn [589 nm, 20° C.]: +0.1040CCP-20CF₃ 8.00% d · Δn [20° C.]: 0.50 CCP-30CF₃ 8.00% Twist [°]: 90CCG-V-F 16.00% V₁₀ [V]: 1.79 BCH-2F.F 8.00% BCH-3F.F 8.00% BCH-3F.F.F8.00% PUQU-2-F 5.00% PUQU-3-F 9.00% BCH-32 4.00% COP-V-1 5.00% Example21 CCH-35 4.00% S → N [° C.]: <−40.0 CC-5-V 9.00% Clearing point [° C.]:+80.0 PCH-53 5.00% Δn [589 nm, 20° C.]: +0.0821 CC-3-V1 10.00% d · Δn[20° C.]: 0.50 CCG-V-F 20.00% Twist [°]: 90 CCP-2F.F.F 9.00% V₁₀ [V]:1.79 CCP-3F.F.F 9.00% BCH-3F.F.F 4.00% PUQU-3-F 9.00% CCP-20CF₃ 8.00%CCP-30CF₃ 3.00% CCP-V-1 10.00% Example 22 CC-3-V 20.00% Clearing point[° C.]: +81.0 CC-3-V1 11.00% Δn [589 nm, 20° C.] +0.0994 CCP-30CF₃ 8.00%d · Δn [20° C.]: 0.50 CCP-20CF₃ 8.00% Twist [°]: 90 PGU-2-F 8.00% V₁₀[V]: 1.55 PUQU-3-F 12.00% CGZP-2-OT 9.00% CCZU-2-F 4.00% CCP-2F.F.F3.00% CCG-V-F 2.00% CCP-V-1 11.00% BCH-32 4.00% Example 23 CC-3-V 19.00%S → N [° C.]: <−40.0 CC-3-V1 8.00% Clearing point [° C.]: +80.0 CCZU-2-F4.00% Δn [589 nm, 20° C.]: +0.1008 CCG-V-F 9.00% d · Δn [20° C.]: 0.50PUQU-2-F 7.00% Twist [°]: 90 PUQU-3-F 11.00% V₁₀ [V]: 1.34 PGU-2-F 4.00%CGZP-2-OT 11.00% CGZP-3-OT 6.00% CCP-40CF₃ 8.00% CCP-30CF₃ 8.00% BCH-323.00% CBC-33 2.00% Example 24 CC-3-V 18.00% S → N [° C.]: <−40.0 CC-3-V19.00% Clearing point [° C.]: +80.0 CCH-35 3.00% Δn [589 nm, 20° C.]:+0.1025 CC-5-V 2.00% γ₁ [20° C., mPa · s]: 78 PGU-2-F 8.00% d · Δn [20°C.]: 0.50 PUQU-2-F 6.00% Twist [°]: 90 PUQU-3-F 11.00% V₁₀ [V]: 1.37CCP-20CF₃ 2.00% CCP-30CF₃ 6.00% CGZP-2-OT 8.00% CGZP-3-OT 7.00% CCZU-3-F10.00% CCP-V-1 8.00% CBC-33 2.00% Example 25 CC-5-V 15.00% Clearingpoint [° C.]: +79.5 CC-3-V1 9.00% Δn [589 nm, 20° C.]: +0.1042 CCZU-2-F4.00% d · Δn [20° C.]: 0.50 CCZU-3-F 4.00% Twist [°]: 90 PUQU-3-F 18.00%V₁₀ [V]: 1.30 PGU-2-F 6.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00% CCP-20CF₃8.00% CCP-30CF₃ 8.00% CCG-V-F 4.00% BCH-32 2.00% CC-V-1 2.00% Example 26CC-3-V 18.00% S → N [° C.]: <−40.0 CC-3-V1 6.00% Clearing point [° C.]:+79.0 CCZU-2-F 4.00% Δn [589 nm, 20° C.]: +0.1046 CCZU-3-F 8.00% γ₁ [20°C., mPa · s]: 88 PUQU-2-F 7.00% d · Δn [20° C.]: 0.50 PUQU-3-F 11.00%Twist [°]: 90 PGU-2-F 6.00% V₁₀ [V]: 1.25 CGZP-2-OT 11.00% CGZP-3-OT9.00% CCP-20CF₃ 8.00% CCP-30CF₃ 8.00% BCH-32 2.00% CBC-33 2.00% Example27 CC-5-V 8.00% Clearing point [° C.]: +81.5 CC-3-V1 8.00% Δn [589 nm,20° C.]: +0.1052 CC-3-2V 8.00% d · Δn [20° C.]: 0.50 CCH-35 4.00% Twist[°]: 90 CCZU-2-F 4.00% V₁₀ [V]: 1.35 CCZU-3-F 5.00% PUQU-2-F 7.00%PUQU-3-F 11.00% PGU-2-F 7.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00% CCP-20CF₃8.00% CCP-30CF₃ 8.00% CBC-33 2.00% Example 28 CCH-301 12.00% CC-3-V111.00% CCH-35 5.00% CCZU-2-F 4.00% CCZU-3-F 5.00% PUQU-2-F 7.00%PUQU-3-F 11.00% PGU-2-F 7.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00% CCP-20CF₃8.00% CCP-30CF₃ 8.00% CBC-33 2.00% Example 29 CC-5-V 10.00% PCH-3014.00% CC-3-V1 10.00% CCH-35 4.00% CCZU-2-F 4.00% CCZU-3-F 5.00% PUQU-2-F7.00% PUQU-3-F 11.00% PGU-2-F 7.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00%CCP-40CF₃ 8.00% CCP-30CF₃ 8.00% CBC-33 2.00% Example 30 CC-3-V1 10.00%Clearing point [° C.]: +80.5 CC-3-2V 10.00% Δn [589 nm, 20° C.]: +0.1060CCH-301 3.00% d · Δn [20° C.]: 0.50 CCH-35 4.00% Twist [°]: 90 CCZU-2-F4.00% V₁₀ [V]: 1.27 CCZU-3-F 10.00% PUQU-2-F 7.00% PUQU-3-F 11.00%PGU-2-F 8.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00% CCP-20CF₃ 3.00% CCP-30CF₃8.00% CBC-33 2.00% Example 31 CC-5-V 16.00% Clearing point [° C.]: +85.5CC-3-V1 10.00% Δn [589 nm, 20° C.]: +0.1052 CCH-3CF₃ 2.00% d · Δn [20°C.]: 0.50 CCH-35 5.00% Twist [°]: 90 CCZU-2-F 5.00% V₁₀ [V]: 1.46PUQU-2-F 8.00% PUQU-3-F 11.00% PGU-2-F 5.00% CGZP-2-OT 10.00% CGZP-3-OT7.00% CCP-30CF₃ 8.00% CCP-V-1 9.00% CBC-33 3.00% CBC-53 1.00% Example 32CC-5-V 16.00% Clearing point [° C.]: +78.5 CC-3-V1 9.00% Δn [589 nm, 20°C.]: +0.1027 CCH-3CF₃ 2.00% d · Δn [20° C.]: 0.50 CCH-35 5.00% Twist[°]: 90 CCZU-2-F 4.00% V₁₀ [V]: 1.44 PUQU-2-F 8.00% PUQU-3-F 11.00%PGU-2-F 6.00% CGZP-2-OT 10.00% CGZP-3-OT 8.00% CCP-30CF₃ 8.00% CCP-V-113.00% Example 33 CC-5-V 13.00% Clearing point [° C.]: +80.0 CC-3-V19.00% Δn [589 nm, 20° C.]: +0.1060 CCH-35 5.00% d · Δn [20° C.]: 0.50CCZU-2-F 5.00% Twist [°]: 90 PUQU-2-F 7.00% V₁₀ [V]: 1.42 PUQU-3-F13.00% PGU-2-F 7.00% CGZP-2-OT 10.00% CGZP-3-OT 7.00% CCP-30CF₃ 8.00%CCP-20CF₃ 4.00% CCP-V-1 12.00% Example 34 CC-5-V 18.00% CC-3-V1 10.00%CCH-3CF₃ 0.00% CCH-35 5.00% CCP-30CF₃ 8.00% PGU-2-F 2.00% PGU-3-F 0.00%CGU-2-F 0.00% CGZP-2-OT 12.00% CGZP-3-OT 7.50% CCZU-2-F 0.00% CCZU-3-F2.00% BCH-32 4.00% PUQU-2-F 10.00% PUQU-3-F 12.00% CCP-V-1 9.50% Example35 CC-5-V 13.00% Clearing point [° C.]: +81.0 CC-3-V1 9.00% Δn [589 nm,20° C.]: +0.1043 CCH-35 5.00% d · Δn [20° C., mPa · s]: 0.50 CCZU-2-F5.00% Twist [°]: 90 PUQU-2-F 7.00% V₁₀ [V]: 1.38 PUQU-3-F 13.00% PGU-2-F5.00% CGU-2-F 1.00% CGZP-2-OT 11.00% CGZP-3-OT 7.00% CCP-30CF₃ 8.00%CCP-20CF₃ 7.00% CCP-V-1 8.00% CBC-33 1.00% Example 36 CC-5-V 12.00%Clearing point [° C.]: +79.0 CC-3-V1 9.00% Δn [589 nm, 20° C.]: +0.1037CCH-35 3.00% d · Δn [20° C.]: 0.50 CCZU-2-F 5.00% Twist [°]: 90 PUQU-2-F7.00% V₁₀ [V]: 1.33 PUQU-3-F 13.00% PGU-2-F 6.00% CGZP-2-OT 11.00%CGZP-3-OT 7.00% CCP-20CF₃ 8.00% CCP-30CF₃ 7.00% CCP-40CF₃ 4.00% CCG-V-F2.00% CCP-V-1 6.00% Example 37 CCP-2F.F.F 12.00% Clearing point [° C.]:+80.0 CCP-3F.F.F 11.00% Δn [589 nm, 20° C.]: +0.0807 CCP-5F.F.F 6.00% d· Δn [20° C.]: 0.50 CCZU-2-F 5.00% Twist [°]: 90 CCZU-3-F 15.00% V₁₀[V]: 1.19 CCZU-5-F 4.00% CCP-20CF₃ 5.00% CCP-30CF₃ 3.00% CCOC-3-3 3.00%CCOC-4-3 4.00% CCOC-3-5 3.00% CC-5-V 11.00% PUQU-3-F 8.00% PUQU-2-F10.00% Example 38 CCH-35 5.00% S → N [° C.]: <−40.0 CC-5-V 15.50%Clearing point [° C.]: +71.0 CCH-3CF₃ 3.50% Δn [589 nm, 20° C.]: +0.0768CCP-20CF₃ 6.00% Υ₁ [20° C., mPa · s]: 94 CCP-40CF₃ 8.00% d · Δn [20°C.]: 0.50 CCP-20CF₃.F 5.00% Twist [°]: 90 CCP-2F.F.F 10.00% V₁₀ [V]:1.21 CCP-3F.F.F 10.00% CCZU-2-F 4.00% CCZU-3-F 15.00% CCZU-5-F 3.00%PUQU-2-F 9.00% PUQU-3-F 6.00% Example 39 CCH-35 4.00% S → N [° C.]:<−20.0 CCP-30CF₃ 8.00% Clearing point [° C.]: +81.5 CCP-40CF₃ 8.00% Δn[589 nm, 20° C.]: +0.1034 CCP-2F.F.F 10.00% Υ₁ [20° C., mPa · s]: 161CGZP-2-OT 14.00% d · Δn [20° C.]: 0.50 CGZP-3-OT 10.00% Twist [°]: 90CCZU-2-F 4.00% V₁₀ [V]: 0.94 CCZU-3-F 15.00% CCZU-5-F 3.00% PGU-2-F2.00% PUQU-2-F 11.00% PUQU-3-F 11.00% Example 40 CCP-2F.F.F 9.00% S → N[° C.]: <−40.0 CCP-20CF₃ 8.00% Clearing point [° C.]: +71.5 CCP-30CF₃5.00% Δn [589 nm, 20° C.]: +0.1044 CCP-40CF₃ 4.00% Υ₁ [20° C., mPa · s]:151 CCQU-2-F 10.00% d · Δn [20° C.]: 0.50 CCQU-3-F 12.00% Twist [°]: 90CCQU-5-F 8.00% V₁₀ [V]: 0.92 PUQU-2-F 12.00% PUQU-3-F 12.00% PGU-2-F9.00% PGU-3-F 2.00% CCGU-3-F 5.00% CBC-33 1.00% CCOC-3-3 3.00% Example41 CCH-35 5.00% CC-5-V 16.00% CCH-3CF₃ 5.00% CCP-20CF₃ 6.00% CCP-40CF₃8.00% CCP-20CF₃.F 3.00% CCP-2F.F.F 10.00% CCP-3F.F.F 10.00% CCZU-2-F3.50% CCZU-3-F 15.00% CCZU-5-F 2.50% PUQU-2-F 8.00% PUQU-3-F 7.00%CCOC-3-3 1.00% Example 42 CCH-35 4.50% S → N [° C.]: <−40.0 CCP-30CF₃8.00% Clearing point [° C.]: +80.0 CCP-40CF₃ 5.00% Δn [589 nm, 20° C.]:+0.1025 CCP-50CF₃ 2.00% d · Δn [20° C.]: 0.50 CCP-2F.F.F 9.50% Twist[°]: 90 CCP-3F.F.F 2.00% V₁₀ [V]: 0.94 CGZP-2-OT 14.00% CGZP-3-OT 10.00%CCZU-2-F 3.50% CCZU-3-F 15.00% CCZU-5-F 2.50% PGU-2-F 2.00% PUQU-2-F8.00% PUQU-3-F 14.00% Example 43 CC-3-V1 4.00% CCH-35 5.00% CC-5-V17.00% CCH-3CF₃ 2.00% CCP-20CF₃ 8.00% CCP-30CF₃ 6.50% CCP-2F.F.F 10.00%CCP-3F.F.F 9.00% CGZP-2-OT 4.50% CCZU-2-F 4.00% CCZU-3-F 14.00% PUQU-3-F8.00% Example 44 CC-3-V1 4.00% S → N [° C.]: <−40.0 CCH-35 5.00%Clearing point [° C.]: +71.0 CC-5-V 17.00% Δn [589 nm, 20° C.]: +0.0797CCH-3CF₃ 2.00% d · Δn [20° C.]: 0.50 CCP-20CF₃ 8.00% Twist [°]: 90CCP-30CF₃ 6.50% V₁₀ [V]: 1.28 CCP-2F.F.F 10.00% CCP-3F.F.F 9.00%CGZP-2-OT 4.50% CCZU-2-F 4.00% CCZU-3-F 14.00% PUQU-3-F 8.50% PUQU-3-F7.50% Example 45 CCP-2F.F.F 12.00% Clearing point [° C.]: +82.0CCP-3F.F.F 10.00% Δn [589 nm, 20° C.]: +0.0800 CCP-5F.F.F 6.00% d · Δn[20° C.]: 0.50 CCZU-2-F 5.00% Twist [°]: 90 CCZU-3-F 15.00% V₁₀ [V]:1.26 CCZU-5-F 4.00% CCP-20CF₃ 3.00% CCP-30CF₃ 2.00% CCP-50CF₃ 3.00%CCOC-3-3 3.00% CCOC-4-3 4.00% CCOC-3-5 3.00% CC-5-V 13.00% PUQU-3-F17.00% Example 46 CCP-2F.F.F 9.00% S → N [° C.]: <−40.0 CCP-20CF₃ 8.00%Clearing point [° C.]: +74.5 CCP-30CF₃ 4.50% Δn [589 nm, 20° C.]:+0.1056 CCP-40CF₃ 4.00% γ₁ [20° C., mPa · s]: 152 CCQU-2-F 10.00% d · Δn[20° C.]: 0.50 CCQU-3-F 12.00% Twist [°]: 90 CCQU-5-F 8.00% V₁₀ [V]:0.91 PUQU-2-F 12.00% PUQU-3-F 12.00% PGU-2-F 9.00% PGU-3-F 1.50%CCGU-3-F 5.00% CBC-33 2.00% CCOC-3-3 3.00% Example 47 CCP-2F.F.F 10.00%S → N [° C.]: <−40.0 CCP-20CF₃ 8.00% Clearing point [° C.]: +69.0CCP-30CF₃ 8.00% Δn [589 nm, 20° C.]: +0.1044 CCP-40CF₃ 4.00% d · Δn [20°C.]: 0.50 CGZP-2-OT 12.00% Twist [°]: 90 CCZU-2-F 4.00% V₁₀ [V]: 0.94CCZU-3-F 14.00% PUQU-2-F 12.00% PUQU-3-F 12.00% PGU-2-F 8.00% CC-3-V16.00% CCP-V-1 2.00% Example 48 CCP-2F.F.F 9.00% S → N [° C.]: <−40.0CCP-3F.F.F 3.00% Clearing point [° C.]: +68.5 CCP-20CF₃ 8.00% Δn [589nm, 20° C.]: +0.1052 CCP-30CF₃ 6.00% d · Δn [20° C.]: 0.50 CGZP-2-OT11.00% Twist [°]: 90 CCZU-2-F 4.00% V₁₀ [V]: 0.96 CCZU-3-F 13.00%PUQU-2-F 12.00% PUQU-3-F 11.00% PGU-2-F 9.00% CC-3-V1 9.00% CCP-V-15.00% Example 49 CCH-35 4.00% Clearing point [° C.]: +81.0 CCP-20CF₃2.00% Δn [589 nm, 20° C.]: +0.1054 CCP-30CF₃ 7.00% γ₁ [20° C., mPa · s]:163 CCP-40CF₃ 6.50% d · Δn [20° C.]: 0.50 CCP-2F.F.F 10.00% Twist [°]:90 CGZP-2-OT 14.00% V₁₀ [V]: 0.94 CGZP-3-OT 10.00% CCZU-2-F 4.00%CCZU-3-F 15.00% CCZU-5-F 3.00% PGU-2-F 4.50% PUQU-3-F 20.00% Example 50CC-3-V1 4.00% S → N [° C.]: <−30.0 CCH-35 5.00% Clearing point [° C.]:+74.0 CC-5-V 18.00% Δn [589 nm, 20° C.]: +0.0807 CCP-20CF₃ 8.00% γ₁ [20°C., mPa · s]: 86 CCP-30CF₃ 8.00% d · Δn [20° C.]: 0.50 CCP-2F.F.F 10.00%Twist [°]: 90 CCP-3F.F.F 8.00% V₁₀ [V]: 1.31 CGZP-2-OT 4.00% CCZU-2-F4.00% CCZU-3-F 15.00% PUQU-3-F 16.00% Example 51 CCP.2F.F.F 10.00% S → N[° C.]: <−40.0 CCP-3F.F.F 10.00% Clearing point [° C.]: +80.0CCP-20CF₃.F 10.00% Δn [589 nm, 20° C.]: +0.0804 CCP-20CF₃ 8.00% γ₁ [20°C., mPa · s]: 112 CCP-30CF₃ 5.00% d · Δn [20° C.]: 0.50 CCP-40CF₃ 4.00%Twist [°]: 90 CCZU-2-F 5.00% V₁₀ [V]: 0.96 CCZU-3-F 15.00% CCZU-5-F4.00% PUQU-3-F 13.00% CCH-35 5.00% CC-5-V 11.00% Example 52 CCP-2F.F.F10.00% S → N [° C.]: <−40.0 CCP-20CF₃ 8.00% Clearing point [° C.]: +71.0CCP-30CF₃ 5.00% Δn [589 nm, 20° C.]: +0.1047 CGZP-2-OT 12.00% γ₁ [20°C., mPa · s]: 125 CGZP-3-OT 4.00% d · Δn [20° C.]: 0.50 CCZU-2-F 5.00%Twist [°]: 90 CCZU-3-F 12.00% V₁₀ [V]: 0.96 PUQU-3-F 20.00% CGU-2-F3.00% PGU-2-F 8.00% CC-3-V1 3.50% CCH-35 5.00% CCP-V-1 4.50% Example 53CCP-2F.F.F 10.00% S → N [° C.]: <−40.0 CCP-20CF₃ 8.00% Clearing point [°C.]: +68.5 CCP-30CF₃ 8.00% Δn [589 nm, 20° C.]: +0.1043 CCP-40CF₃ 4.00%γ₁ [20° C., mPa · s]: 126 CGZP-2-OT 12.00% d · Δn [20° C.]: 0.50CCZU-2-F 5.00% Twist [°]: 90 CCZU-3-F 15.00% V₁₀ [V]: 0.91 PUQU-3-F22.00% PGU-2-F 9.00% PGU-3-F 1.00% CC-3-V1 3.50% CCH-35 2.50% Example 54CCP-2F.F.F 9.00% S → N [° C.]: <−40.0 CCP-3F.F.F 9.00% Clearing point [°C.]: +69.0 CCP-20CF₃.F 5.00% Δn [589 nm, 20° C.]: +0.1049 CCP-20CF₃8.00% γ₁ [20° C., mPa · s]: 144 CCP-30CF₃ 7.00% d · Δn [20° C.]: 0.50CCP-40CF₃ 4.00% Twist [°]: 90 CCZU-2-F 5.00% V₁₀ [V]: 0.92 CCZU-3-F15.00% PUQU-3-F 25.00% PGU-2-F 8.00% PGU-3-F 2.00% CBC-33 3.00% Example55 CC-3-V 18.00% Clearing point [° C.]: +79.5 CC-3-V1 9.00% Δn [589 nm,20° C.]: +0.1014 CCH-35 3.00% d · Δn [20° C.]: 0.50 CC-5-V 2.00% Twist[°]: 90 CCP-30CF₃ 7.00% V₁₀[V]: 1.58 CCP-20CF₃ 6.00% PGU-2-F 7.00%PUQU-2-F 7.00% PUQU-3-F 11.00% CGZP-3-OT 6.00% CCG-V-F 5.00% CCP-V-116.00% BCH-32 3.00% Example 56 CC-3-V1 11.00% S → N [° C.]: <−79.5PCH-53 2.00% Clearing point [° C.]: +40.0 CC-5-V 8.00% Δn [589 nm, 20°C.]: +0.1040 CCP-20CF₃ 8.00% d · Δn [20° C.]: 0.50 CCP-30CF₃ 8.00% Twist[°]: 90 CCG-V-F 16.00% V₁₀[V]: 1.59 BCH-2F.F 8.00% BCH-3F.F 8.00%BCH-3F.F.F 8.00% PUQU-2-F 5.00% PUQU-3-F 9.00% BCH-32 4.00% CCP-V-15.00% Example 57 CC-3-V 20.00% Clearing point [° C.]: +81.0 CC-3-V111.00% Δn [589 nm, 20° C.]: +0.0994 CCP-30CF₃ 8.00% d · Δn [20° C.]:0.50 CCP-20CF₃ 8.00% Twist [°]: 90 PGU-2-F 8.00% V₁₀[V]: 1.55 PUQU-3-F12.00% CGZP-2-OT 9.00% CCZU-2-F 4.00% CCP-2F.F.F 3.00% CCG-V-F 2.00%CCP-V-1 11.00% BCH-32 4.00% Example 58 CC-3-V 19.00% S → N [° C.]:<−40.0 CC-3-V1 8.00% Clearing point [° C.]: +80.0 CCZU-2-F 4.00% Δn [589nm, 20° C.]: +0.1008 CCG-V-F 9.00% d · Δn [20° C.]: 0.50 PUQU-2-F 7.00%Twist [°]: 90 PUQU-3-F 11.00% V₁₀ [V]: 1.34 PGU-2-F 4.00% CGZP-2-OT11.00% CGZP-3-OT 6.00% CCP-40CF₃ 8.00% CCP-30CF₃ 8.00% BCH-32 3.00%CBC-33 2.00% Example 59 CC-3-V1 10.00% Clearing point [° C.]: +79.5CC-5-V 8.00% Δn [589 nm, 20° C.]: +0.1040 PCH-301 4.00% d · Δn [20° C.]:0.50 CCH-35 4.00% Twist [°]: 90 CCZU-2-F 4.00% V₁₀ [V]: 1.28 CCZU-3-F11.00% PUQU-2-F 7.00% PUQU-3-F 10.00% PGU-2-F 7.00% CGZP-2-OT 11.00%CGZP-3-OT 7.00% CCP-20CF₃ 8.00% CCP-30CF₃ 7.00% CBC-33 2.00% Example 60CCH-35 4.00% S → N [° C.]: <−40.0 CC-5-V 12.00% Clearing point [° C.]:+80.5 PCH-53 4.00% Δn [589 nm, 20° C.]: +0.0808 CC-3-V1 10.00% γ₁ [20°C., mPa · s]: 81 CCG-V-F 20.00% d · Δn [20° C.]: 0.50 CCP-2F.F.F 10.00%Twist [°]: 90 CCP-3F.F.F 10.00% V₁₀ [V]: 1. 82 PUQU-3-F 9.00% CCP-20CF₃8.00% CCP-30CF₃ 5.00% CCP-V-1 8.00% Example 61 CC-5-V 15.00% Clearingpoint [° C.]: +79.5 CC-3-V1 9.00% Δn [589 nm, 20° C.]: +0.1042 CCZU-2-F4.00% d · Δn [20° C.]: 0.50 CCZU-3-F 4.00% Twist [°]: 90 PUQU-3-F 18.00%V₁₀ [V]: 1.30 PGU-2-F 6.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00% CCP-20CF₃8.00% CCP-30CF₃ 8.00% CCG-V-V 4.00% BCH-32 2.00% CCP-V-1 2.00% Example62 CC-3-V 18.00% S → N [° C.]: <−40.0 CC-3-V1 6.00% Clearing point [°C.]: +79.0 CCZU-2-F 4.00% Δn [589 nm, 20° C.]: +0.1046 CCZU-3-F 8.00% γ₁[20° C., mPa · s]: 88 PUQU-2-F 7.00% d · Δn [20° C.]: 0.50 PUQU-3-F11.00% Twist [°]: 90 PGU-2-F 6.00% V₁₀ [V]: 1.25 CGZP-2-OT 11.00%CGZP-3-OT 9.00% CCP-20CF₃ 8.00% CCP-30CF₃ 8.00% BCH-32 2.00% CBC-332.00% Example 63 CC-5-V 8.00% Clearing point [° C.]: +81.5 CC-3-V1 8.00%Δn [589 nm, 20° C.]: +0.1052 CC-3-2V 8.00% d · Δn [20° C.]: 0.50 CCH-354.00% Twist [°]: 90 CCZU-2-F 4.00% V₁₀ [V]: 1.35 CCZU-3-F 5.00% PUQU-2-F7.00% PUQU-3-F 11.00% PGU-2-F 7.00% CGZP-2-OT 11.00% CGZP-2-OT 9.00%CCP-20CF₃ 8.00% CCP-30CF₃ 8.00% CBC-33 2.00% Example 64 CCH-301 12.00%CC-3-V1 11.00% CCH-35 5.00% CCZU-2-F 4.00% CCZU-3-F 5.00% PUQU-2-F 7.00%PUQU-3-F 11.00% PGU-2-F 7.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00% CCP-20CF₃8.00% CCP-30CF₃ 8.00% CBC-33 2.00% Example 65 CC-5-V 10.00% PCH-3014.00% CC-3-V1 10.00% CCH-35 4.00% CCZU-2-F 4.00% CCZU-3-F 5.00% PUQU-2-F7.00% PUQU-3-F 11.00% PGU-2-F 7.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00%CCP-40CF₃ 8.00% CCP-30CF₃ 8.00% CBC-33 2.00% Example 66 CC-3-V1 10.00%Clearing point [° C.]: +80.5 CC-3-2V 10.00% Δn [589 nm, 20° C.]: +0.1060CCH-301 3.00% d · Δn [20° C.]: 0.50 CCH-35 4.00% Twist [°]: 90 CCZU-2-F4.00% V₁₀ [V]: 1.27 CCZU-3-F 10.00% PUQU-2-F 7.00% PUQU-3-F 11.00%PGU-2-F 8.00% CGZP-2-OT 11.00% CGZP-3-OT 9.00% CCP-20CF₃ 3.00% Example67 CCP-2F.F.F 9.00% S → N [° C.]: <−40.0 CCP-3F.F.F 10.00% Clearingpoint [° C.]: +73.0 CCQU-2-F 11.00% Δn [589 nm, 20° C.]: +0.0667CCQU-3-F 11.00% CCQU-5-F 4.00% CCZU-2-F 4.00% CCZU-3-F 14.00%CCP-20CF₃.F 5.00% CCCG-V-F 5.00% CGU-2-F 3.00% CC-5-V 14.00% CCH-5017.00% PCH-7F 3.00% Example 68 CC-5-V 11.00% S → N [° C.]: <−40.0 CC-3-V17.00% Clearing point [° C.]: +79.5 BCCP-3F.F 6.00% Δn [589 nm, 20° C.]:+0.1006 BCCP-5F.F 6.00% γ₁ [20° C., mPa · s]: 114 CCQU-2-F 10.00% d · Δn[20° C.]: 0.50 CCQU-3-F 10.00% Twist [°]: 90 BCH-3F.F.F 15.00% V₁₀ [V]:1.54 BCH-2F.F 8.00% BCH-3F.F 8.00% CGU-2-F 10.00% BCH-32 5.00% CCP-V-14.00% Example 69 CC-5-V 11.00% Clearing point [° C.]: +88.0 CCH-35 4.00%Δn [589 nm, 20° C.]: +0.0801 CGU-2-F 10.00% d · Δn [20° C.]: 0.50CGU-3-F 10.00% Twist [°]: 90 CCP-2F.F.F 5.00% V₁₀ [V]: 1.59 CCQG-2-F14.00% CCQG-3-F 14.00% CCQG-5-F 10.00% ECCP-3F.F 12.00% ECCP-5F.F 10.00%Example 70 CC-3-V1 5.00% S → N [° C.]: <−20.0 CCH-35 5.00% Clearingpoint [° C.]: +77.5 CC-5-V 18.00% Δn [589 nm, 20° C.]: +0.0800 CCQU-2-F11.50% d · Δn [20° C.]: 0.50 CCQU-3-F 12.00% Twist [°]: 90 CGU-2-F 9.00%V₁₀ [V]: 1.29 CGU-3-F 6.00% CCZU-2-F 4.00% CCZU-3-F 15.00% CGZP-2-OT10.50% CGZP-3-OT 4.00% Example 71 CCP-2F.F.F 9.00% S→ N [° C.]: <−40.0CCP-3F.F.F 10.00% Clearing point [° C.]: +76.0 CCQU-2-F 11.00% Δn [589nm, 20° C.]: +0.0671 CCQU-3-F 11.00% Δε [1 kHz, 20° C.]: 8.0 CCQU-5-F4.00% CCZU-2-F 4.00% CCZU-3-F 14.00% CCP-20CF₃.F 5.00% CCG-V-F 5.00%CGU-2-F 3.00% CC-5-V 16.00% CCH-501 7.00% PCH-7F 1.00% Example 72CCP-2F.F.F 8.00% Clearing point [° C.]: +80.5 CCP-3F.F.F 8.00% Δn [589nm, 20° C.]: +0.0838 CCP-5F.F.F 7.00% d · Δn [20° C.]: 0.50 CCP-20CF₃8.00% Twist [°]: 90 CCP-30CF₃ 8.00% V₁₀ [V]: 1.27 CGU-2-F 10.00% CGU-3-F3.00% BCH-3F.F.F 7.00% CCG-V-F 10.00% CC-3-V1 4.00% CCQU-2-F 8.00%CCQU-3-F 10.00% CCQU-5-F 9.00% Example 73 CCP-2F.F.F 10.00% S → N [°C.]: <−40.0 CCP-3F.F.F 10.00% Clearing point [° C. ]: +82.5 CCP-5F.F.F4.00% Δn [589 nm, 20° C.]: +0.0791 CCP-20CF₃ 8.00% d · Δn [20° C.]: 0.50CCP-30CF₃ 8.00% Twist [°]: 90 CCP-40CF₃ 4.00% V₁₀ [V]: 1.38 CCZU-2-F5.00% CCZU-3-F 15.00% CCZU-5-F 4.00% PUQU-3-F 12.00% CCH-35 5.00% CC-5-V15.00% CGZP-2-OT 0.00% Example 74 CCP-2F.F.F 10.00% S → N [° C.]: <−40.0CCP-20CF₃ 8.00% Clearing point [° C.]: +71.5 CCP-30CF₃ 4.00% Δn [589 nm,20° C.]: +0.1044 CGZP-2-OT 12.00% Δε [1 kHz, 20° C.]: 14.5 CGZP-3-OT4.00% γ₁ [20° C., mPa · s]: 115 CCZU-2-F 4.00% d · Δn [20° C.]: 0.50CCZU-3-F 9.00% Twist [°]: 90 PUQU-3-F 20.00% V₁₀ [V]: 1.02 CGU-2-F 5.00%PGU-2-F 6.00% CC-3-V1 9.00% CCH-35 2.00% CCP-V-1 7.00% Example 75 ME2N.F2.00% Clearing point [° C.]: +89.9 ME3N.F 3.50% Δn [589 nm, 20° C.]:+0.1380 ME4N.F 6.00% Δε [1 kHz, 20° C.]: 13.9 PCH-3N.F.F 14.00% γ₁ [20°C., mPa · s]: 140 CC-5-V 12.00% CC-3-V1 5.00% CCP-V-1 8.00% CCP-V2-14.00% CVCP-V-O1 5.00% PPTUI-3-2 14.50% PTP-201 3.00% CCPC-33 3.00%CCQU-2-F 10.00% CCQU-3-F 10.00% Example 76 CC-3-V1 9.00% S → N [° C.]:<−40.0 CC-5-V 12.00% Clearing point [° C.]: +85.5 CCQU-2-F 12.00% Δn[589 nm, 20° C.]: +0.0775 CCQU-3-F 11.00% γ_(1 ·) [2° C., mPa · s]: 115CCP-3F.F.F 7.00% d · Δn [20° C.]: 0.50 CCQG-2-F 12.00% Twist [°]: 90CCQG-3-F 12.00% V₁₀ [V]: 1. 55 CCQG-5-F 8.00% CGU-2-F 5.00% BCH-3F.F.F12.00% Example 77 CC-5-V 10.00% S → N [° C.]: <−40.0 CC-3-V1 8.00%Clearing point [° C.]: +79.0 CCQG-2-F 10.00% Δn [589 nm, 20° C.]:+0.0996 CCQG-3-F 11.00% d · Δn [20° C.]: 0.50 CCQU-2-F 11.00% Twist [°]:90 BCH-3F.F.F 15.00% V₁₀ [V]: 1.49 BCH-2F.F 8.00% BCH-3F.F 8.00% CGU-2-F10.00% BCH-32 5.00% CHP-V-1 4.00% Example 78 CCP-30CF₃ 8.00% S → N [°C.]: <−40.0 CCP-40CF₃ 6.00% Clearing point [° C.]: +78.5 CCP-2F.F.F7.00% Δn [589 nm, 20° C.]: +0.1042 CGZP-2-OT 14.00% γ₁ [20° C.], mPa ·s]: 178 CGZP-3-OT 10.00% d · Δn [20° C.]: 0.50 CCZU-2-F 4.00% Twist [°]:90 CCZU-3-F 15.00% V₁₀ [V]: 0. 93 CCZU-5-F 3.00% CGU-2-F 4.00% PGU-2-F10.00% CUQU-3-F 16.00% CCP-V-1 3.00% Example 79 CCP-30CF₃ 8.00% Clearingpoint [° C.]: +80.5 CCP-40CF₃ 6.00% Δn [589 nm, 20° C.]: +0.1060CCP-50CF₃ 2.00% γ₁ [20° C., mPa · s]: 181 CCP-2F.F.F 7.00% d · Δn [20°C.]: 0.50 CGZP-2-OT 13.50% Twist [°]: 90 CGZP-3-OT 9.50% V₁₀ [V]: 0.97CCZU-2-F 4.00% CCZU-3-F 15.00% CCZU-5-F 3.00% CGU-3-F 2.00% PGU-2-F9.00% PGU-3-F 3.00% CUQU-2-F 7.00% CUQU-3-F 9.00% CCP-V-1 2.00% Example80 CCP-20CF₃ 8.00% S → N [° C.]: <−40.0 CCP-30CF₃ 8.00% Clearing point[° C.]: +72.0 CGZP-2-OT 12.00% Δn [589 nm, 20° C.]: +0.1056 CGZP-3-OT8.00% γ₁ [20° C., mPa · s]: 131 CCZU-2-F 3.00% d · Δn [20° C.]: 0.50CCZU-3-F 13.00% Twist [°]: 90 CUQU-2-F 6.00% V_(10 [V]:) 1. 02 CUQU-3-F6.00% CUQU-5-F 2.00% CGU-2-F 5.00% CGU-3-F 6.00% PGU-2-F 7.00% PGU-3-F5.00% CC-3-V1 9.00% CCH-35 2.00% Example 81 CC-3-V 4.00% S → N [° C. ]:<−30.0 CCP-30CF₃ 8.00% Clearing point [° C.]: +79.5 CCP-40CF₃ 7.50% Δn[589 nm, 20° C.]: +0.1058 CCP-2F.F.F 10.00% γ₁ [20° C., mPa · s]: 157CGZP-2-OT 14.00% d · Δn [20° C.]: 0.50 CGZP-3-OT 10.00% Twist [°]: 90CCZU-2-F 4.00% V₁₀ [V]: 0. 95 CCZU-3-F 15.00% CCZU-5-F 3.00% PGU-2-F4.50% PUQU-3-F 20.00% Example 82 CC-3-V1 8.00% Clearing point [° C.]:+87.5 CC-5-V 8.00% Δn [589 nm, 20° C.]: +0.0876 CCQU-2-F 12.00% d · Δn[20° C.]: 0.50 CCQU-3-F 13.00% Twist [°]: 90 CCP-2F.F.F 4.00% V₁₀ [V]:1.58 CCG-V-F 4.00% BCH-3F.F.F 7.00% CGU-2-F 10.00% CGU-3-F 6.00%ECCP-3F.F 8.00% ECCP-5F.F 8.00% CCP-V-1 11.00% CBC-33 1.00% Example 83CC-5-V 8.00% S → N [° C. ]: <−40.0 CC-3-V1 7.00% Clearing point [° C.]:+80.5 ECCP-3F.F 8.00% Δn [589 nm, 20° C.]: +0.0978 ECCP-5F.F 8.00% d ·Δn [20° C.]: 0.50 CCQU-2-F 12.00% Twist [°]: 90 CCQU-3-F 11.00% V₁₀ [V]:1.50 BCH-3F.F.F 15.00% BCH-2F.F 8.00% BCH-3F.F 5.00% CGU-2-F 10.00%BCH-32 5.00% CCP-V-1 3.00% Example 84 CCP-2F.F.F 8.00% S → N [° C. ]:<−40.0 CCP-20CF₃ 6.00% Clearing point [° C.]: +79.5 CCP-30CF₃ 4.00% Δn[589 nm, 20° C.]: +0.0855 CGU-2-F 10.00% d · Δn [20° C.]: 0.50 CGU-3-F4.00% Twist [°]: 90 BCH-3F.F.F 7.00% V₁₀ [V]: 1.24 BCH-32 2.00% CCZU-2-F4.00% CCZU-3-F 14.00% CCG-V-F 10.00% CC-3-V1 9.00% CCQU-2-F 11.00%CCQU-3-F 11.00% Example 85 CCP-2F.F.F 10.00% S → N [° C. ]: <−40.0CCP-3F.F.F 10.00% Clearing point [° C.]: +79.0 CCP-5F.F.F 5.00% Δn [589nm, 20° C.]: +0.0865 CCP-20CF₃ 8.00% d · Δn [20° C.]: 0.50 CCP-30CF₃8.00% Twist [°]: 90 CGU-2-F 10.00% V₁₀ [V]: 1.24 CGU-3-F 5.00%BCH-3F.F.F 6.00% BCH-32 2.00% CCG-V-F 6.00% CC-3-V1 3.00% CCQU-2-F 8.00%CCQU-3-F 10.00% CCQU-5-F 11.00% Example 86 CC-5-V 18.00% S → N [° C. ]:<−40.0 CC-3-V1 7.00% Clearing point [° C. ]: +72.0 CCH-35 3.00% Δn [589nm, 20° C.]: +0.0842 CCG-V-F 4.00% γ₁ [20° C., mPa · s]: 93 CCQU-2-F10.00% d · Δn [20° C.]: 0.50 CCQU-3-F 7.00% Twist [°]: 90 BCH-3F.F.F7.00% V₁₀ [V]: 1 .28 CGU-2-F 10.00% CGU-3-F 8.00% CCZU-2-F 3.00%CCZU-3-F 12.00% CGZP-2-OT 8.00% CGZP-3-OT 2.00% CCP-V-1 1.00% Example 87CCP-20CF₃ 8.00% S → N [° C.]: <−40.0 CCP-30CF₃ 7.00% Clearing point [°C.]: +80.5 CCP-40CF₃ 3.00% Δn [589 nm, 20° C.]: +0.0897 CCP-50CF₃ 5.00%d · Δn [20° C.]: 0.50 CCP-2F.F.F 10.00% Twist [°]: 90 CCP-3F.F.F 5.00%V₁₀ [V]: 1.22 CGU-2-F 11.00% CGU-3-F 6.00% BCH-3F.F.F 9.00% BCH-32 3.00%CCQU-2-F 11.00% CCQU-3-F 11.00% CCQU-5-F 11.00% Example 88 CGZP-2-OT12.00% S → N [° C.]: <−40.0 CGZP-3-OT 3.00% Clearing point [° C.]: +69.0CC-5-V 20.00% Δn [589 nm, 20° C.]: +0.0900 CC-3-V1 10.00% γ₁ [20° C.,mPa · s]: 88 CCP-2F.F.F 4.00% d · Δn [20° C.]: 0.50 CCP-20CF₃ 2.00%Twist [°]: 90 BCH-3F.F.F 8.00% V₁₀ [V]: 1.34 CGU-2-F 10.00% CGU-3-F10.00% BCH-32 4.00% CCQU-2-F 10.00% CCQU-3-F 7.00% Example 89 CC-5-V9.00% S → N [° C.]: <−40.0 CC-3-V1 10.00% Clearing point [° C.]: +79.0CCQG-2-F 12.00% Δn [589 nm, 20° C.]: +0.0998 CCQG-3-F 12.00% γ₁ [20° C.,mPa · s]: 114 CCQG-5-F 9.00% d · Δn [° C.]: 0.50 BCH-2F.F 8.00% Twist[°]: 90 BCH-3F.F 7.00% V₁₀ [V]: 1.51 BCH-3F.F.F 14.00% CGU-2-F 10.00%CGU-3-F 5.00% BCH-32 4.00% Example 90 CC-5-V 8.00% S → N [° C. ]: <−40.0CC-3-V1 10.00% Clearing point [° C. ]: +80.0 CCQG-2-F 12.00% Δn [589 nm,20° C.]: +0.0978 CCQG-3-F 12.00% d · Δn [20° C.]: 0.50 CCQG-5-F 10.00%Twist [°]: 90 BCH-2F.F 8.00% V₁₀ [V]: 1. 51 BCH-3F.F 6.00% BCH-3F.F.F15.00% CGU-2-F 10.00% CGU-3-F 5.00% CCP-V-1 2.00% BCH-32 2.00% Example91 CCP-2F.F.F 10.00% S → N [° C.]: <−40.0 CCP-3F.F.F 10.00% Clearingpoint [° C.]: +74.5 CCP-5F.F.F 4.00% Δn [589 nm, 20° C.]: +0.0930CCQG-2-F 10.00% γ₁ [20° C., mPa · s]: 155 CCQG-3-F 10.00% d · Δn [20°C.]: 0.50 CCP-20CF₃ 8.00% Twist [°]: 90 CCP-30CF₃ 7.00% V₁₀ [V]: 1.19CCP-50CF₃ 4.00% CGU-2-F 11.00% CGU-3-F 11.00% CGU-5-F 6.00% BCH-3F.F.F7.00% BCH-32 2.00% Example 92 CC-5-V 6.00% S → N [° C.]: <−40.0 CC-3-V110.00% Clearing point [° C.]: +82.0 CCQG-2-F 12.00% Δn [589 nm, 20° C.]:+0.1002 CCQG-3-F 12.00% d · Δn [20° C.]: 0.50 CCQG-5-F 10.00% Twist [°]:90 BCH-2F.F 8.00% V₁₀ [V]: 1.46 BCH-3F.F 5.00% BCH-3F.F.F 15.00% CGU-2-F10.00% CGU-3-F 6.00% BCH-32 2.00% CCP-V-1 4.00% Example 93 CC-3-V1 6.00%S → N [° C.]: <−40.0 CC-5-V 13.00% Clearing point [° C.]: +86.5 CCQG-2-F12.00% Δn [589 nm, 20° C.]: +0.08750 CCQG-3-F 12.00% γ₁ [20° C., mPa ·s]: 121 CCQG-5-F 10.00% d · Δn [20° C.]: 0.50 CCP-20CF₃ 3.00% Twist [°]:90 CCP-30CF₃ 5.00% V₁₀ [V]: 1.62 ECCP-3F.F 10.00% BCH-3F.F.F 10.00%CGU-2-F 10.00% CGU-3-F 7.00% BCH-32 2.00% Example 94 CC-5-V 8.00% S → N[° C.]: <−40.0 CC-3-V1 7.00% Clearing point [° C.]: +78.0 ECCP-3F.F9.00% Δn [589 nm, 20° C.]: +0.0984 ECCP-5F.F 9.00% d · Δn [20° C.]: 0.50CCQU-2-F 12.00% Twist [°]: 90 CCQU-3-F 11.00% V₁₀ [V]: 1.47 BCH-3F.F.F15.00% BCH-2F.F 8.00% BCH-3F.F 6.00% CGU-2-F 10.00% BCH-32 5.00% Example95 CCH-301 16.00% Clearing point [° C.]: +98.5 CCH-501 18.00% Δn [589nm, 20° C.]: +0.0606 CC-5-V 4.00% d · Δn [20° C.]: 0.50 CCZU-2-F 4.00%Twist [°]: 90 CCZU-3-F 13.00% V₁₀ [V]: 2.14 CCZU-5-F 4.00% CCPC-33 3.00%CCPC-34 3.00% CCOC-3-3 3.00% CCOC-4-3 4.00% CCOC-3-5 3.00% CCQPC-3-32.00% CCQPC-2-3 2.00% CCQU-2-F 8.00% CCQU-3-F 8.00% CCQU-5-F 5.00%Example 96 CC-3-V1 8.00% CC-5-V 6.00% CCP-20CF₃ 6.00% CCQU-2-F 11.00%CCQU-3-F 11.00% CCP-2F.F.F 6.00% CGU-2-F 11.00% CGU-3-F 10.00% CCZU-2-F4.00% CCZU-3-F 14.00% CGZP-2-OT 11.00% CGZP-3-OT 2.00% Example 97CCP-2F.F.F 6.00% S → N [° C.]: <−40.0 CCP.3.F.F.F 8.00% Clearing point[° C.]: +81.5 CCP-5F.F.F 4.00% Δn [589 nm, 20° C.]: +0.0808 CGU-2-F10.00% d · Δn [20° C.]: 0.50 CGU-3-F 12.00% Twist [°]: 90 CCZU-2-F 5.00%V₁₀ [V]: 1.01 CCZU-3-F 14.00% CCZU-5-F 4.00% CCQU-2-F 10.00% CCQU-3-F12.00% CCQU-5-F 8.00% CCOC-3-3 2.00% CCOC-4-3 3.00% CCOC-3-5 2.00%Example 98 CGU-2-F 9.00% Clearing point [° C.]: +74.0 CCZU-2-F 5.00% Δn[589 nm, 20° C.]: +0.0783 CCZU-3-F 14.00% CCZU-5-F 4.00% CCQU-2-F 10.00%CCQU-3-F 12.00% CCQU-5-F 8.00% CDU-2-F 10.00% CDU-3-F 10.00% CDU-5-F6.00% CGZP-2-OT 8.00% CGZP-3-OT 4.00% Example 99 CCH-301 7.00% CCH-50114.00% CCOC-3-3 3.00% CCOC-3-5 3.00% CCOC-4-3 4.00% CCZU-2-F 5.00%CCZU-3-F 15.00% CCZU-5-F 4.00% CDU-2-F 9.00% CDU-3-F 9.00% CDU-5-F 5.00%CCQU-2-F 7.00% CCQU-3-F 8.00% CCQU-5-F 7.00% Example 100 CGU-2-F 5.00% S→ N [° C.]: <−40.0 CCZU-2.F 4.00% Clearing point [° C.]: +78.5 CCZU-3-F14.00% Δn [589 nm, 20° C.]: +0.0809 CCZU-5-F 4.00% d · Δn [20° C.]: 0.50CCQU-2-F 10.00% Twist [°]: 90 CCQU-3-F 12.00% V₁₀ [V] 0.90 CCQU-5-F5.00% CDU-2-E 10.00% CDU-3-F 12.00% CDU-5-F 6.00% CGZP-2-OT 12.00%CGZP-3-OT 6.00% Example 101 CC-3-V1 4.00% S → N [° C.]: <−40.0 CCH-355.00% Clearing point [° C.]: +71.5 CC-5-V 17.00% Δn [589 nm, 20° C.]:+0.0772 CCH-3CF₃ 4.00% γ₁ [20° C., mPa · s]: 96 CCQU-2-F 10.00% d · Δn[20° C.]: 0.50 CCQU-3-F 9.00% Twist [°]: 90 CCP-2F.F.F 4.00% V₁₀ [V]:1.29 CGU-2-F 9.00% CGU-3-F 6.00% CCZU-2-F 4.00% CCZU-3-F 14.00%CGZP-2-OT 9.00% CGZP-3-OT 5.00% Example 102 CCP-2F.F.F 11.00% S → N [°C.]: <−40.0 CCP-3F.F.F 12.00% Clearing point [° C.]: +79.0 CCP-5F.F.F4.00% Δn [589 nm, 20° C.]: +0.0804 CGU-2-F 8.00% γ₁ [20° C., mPa · s]:177 CGU-3-F 4.00% d · Δn [20° C.]: 0.50 CCZU-2-F 5.00% Twist [°]: 90CCZU-3-F 14.00% V₁₀ [V]: 1.00 CCZU-5-F 4.00% CCQU-2-F 10.00% CCQU-3-F12.00% CCQU-5-F 8.00% CGZP-2-OT 8.00% Example 103 CCP-2F.F.F 8.00%CCP-3F.F.F 4.00% CCZU-2-F 5.00% CCZU-3-F 14.00% CGU-2-F 7.00% CGZP-2-OT10.00% CGZP-3-OT 5.00% CCQU-2-F 9.00% CCQU-3-F 12.00% CCQU-5-F 6.00%CDU-2-F 10.00% CDU-3-F 10.00% Example 104 CC-5-V 18.00% CCH-3-CF₃ 5.00%CCQU-2-F 9.00% CCQU-3-F 9.00% CCQU-5-F 5.00% CCP-2F.F.F 9.00% CCP-3F.F.F4.00% CCG-V-F 5.00% CGU-2-F 9.00% CCZU-2-F 3.00% CCZU-3-F 13.00%CGZP-2-OT 11.00% Example 105 CC-3-V1 4.00% S → N [° C.]: <+40.0 CC-5-V17.00% Clearing point [° C.]: −69.0 CCH-3CF₃ 6.00% Δn [589 nm, 20° C.]:+0.0738 CCQU-2-F 9.00% γ₁ [20° C., mPa · s]: 97 CCQU-3-F 10.00% d Δn[20° C.]: 0.50 CCQU-5-F 5.00% Twist [°]: 90 CCP-2.F.F.F 10.00% V₁₀ [V]:1.22 BCH-3F.F.F 2.50% CGU-2-F 8.50% CCZU-2-F 3.00% CCZU-3-F 14.00%CGZP-2-OT 9.00% CGZP-3-OT 2.00%

1. Liquid-crystalline medium based on a mixture of polar compoundshaving positive dielectric anisotropy, characterized in that itcomprises one or more alkenyl compounds of the formula I

and one or more compounds of the formula IA

in which the individual radicals have the following meanings: R is ahalogenated or unsubstituted alkyl or alkoxy radical having 1 to 15carbon atoms, where one or more CH₂ groups in these radicals may also,in each case independently of one another, be replaced by —C≡C—,—CH═CH—, —O—, —CO—O— or —O—CO— in such a way that O atoms are not linkeddirectly to one another, R¹ is an alkenyl radical having 2 to 7 carbonatoms, R² is as defined for R or, if y is 1 or 2, is alternatively Q—Y,Q is CF₂, OCF₂, CFH, OCFH, OCHFCF₂, OCF₂CHFCF₂ or a single bond, Y is For Cl, X is F, Cl, CN, a halogenated alkyl radical, a halogenatedalkenyl radical, a halogenated alkoxy radical or a halogenatedalkenyloxy radical having up to 6 carbon atoms, Z¹ and Z² are each,independently of one another, —CF₂O—, OCF₂— or a single bond, where, ifz=1, Z¹≠Z²,

 are each, independantly of one another,

y is 0, 1 or 2, and z is 0 or 1, and L¹, L², L³ and L⁴ are each,independently of one another, H or F.
 2. Medium according to claim 1,characterized in that it comprises one or more compounds of thefollowing formulae:

in which R^(1a) and R^(2a) are each, independently of one another, H,CH₃, C₂H₅ or n-C₃H₇, and alkyl is an alkyl group having 1 to 7 carbonatoms.
 3. Medium according to claim 1 or 2, characterized in that itcomprises one, two or more compounds of the formulae IA1-IA15:

in which R is as defined in claim
 1. 4. Medium according to at least oneof claims 1 to 3, characterized in that it additionally comprises one ormore compounds selected from the group consisting of the generalformulae II, III, IV, V and VI:

in which the individual radicals have the following meanings: R⁰ isn-alkyl, oxaalkyl, fluoroalkyl or alkenyl, in each case having up to 9carbon atoms, X⁰ is F, Cl, halogenated alkyl, alkenyl or alkoxy havingup to 6 carbon atoms, Z⁰ is —C₂F₄—, —C₂H₄—, —(CH₂)₄—, —OCH₂— or —CH₂O—,Y¹ and Y² are each, independently of one another, H or F, r is 0 or 1.5. Medium according to claim 4, characterized in that the proportion ofcompounds of the formulae IA and I to VI together in the total mixtureis at least 50% by weight.
 6. Medium according to at least one of claims1 to 5, characterized in that it additionally comprises one or morecompounds of the formulae Ea to Ed

in which R⁰ is as defined in claim
 4. 7. Medium according to at leastone of claims 1 to 6, characterized in that it comprises one or morecompounds of the formulae IIa to IIg:

in which R⁰ is as defined in claim
 4. 8. Medium according to at leastone of claims 1 to 7, characterized in that the proportion of compoundsof the formula IA in the total mixture is from 10 to 50% by weight. 9.Use of the liquid-crystalline medium according to at least one of claims1 to 7 for electro-optical purposes.
 10. Electro-optical liquid-crystaldisplay containing a liquid-crystalline medium according to least one ofclaims 1 to 7.